ELM17800GA MOSFET Datasheet: N-Ch, 20V, 0.9A. Full specification with pinout and replacement list

ELM17800GA Specs and Replacement

Type Designator: ELM17800GA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 17 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: SC-70-6

ELM17800GA substitution

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ELM17800GA datasheet

..1. Size:411K elm
elm17800ga.pdf pdf_icon

Dual N-channel MOSFET ELM17800GA-S General description Features ELM17800GA-S uses advanced trench technology Vds=20V to provide excellent Rds(on), low gate charge and Id=0.9A (Vgs=4.5V) operation with gate voltages as low as 1.8V and internal Rds(on) ... See More ⇒

9.1. Size:406K elm
elm17400fa.pdf pdf_icon

Single N-channel MOSFET ELM17400FA-S General description Features ELM17400FA-S uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and operation Id=1.7A (Vgs=10V) with gate voltages as low as 2.5V. Rds(on) ... See More ⇒

9.2. Size:386K elm
elm17401fa.pdf pdf_icon

Single P-channel MOSFET ELM17401FA-S General description Features ELM17401FA-S uses advanced trench technology Vds=-30V to provide excellent Rds(on), low gate charge and Id=-1.2A (Vgs=-10V) operation with gate voltages as low as 2.5V. Rds(on) ... See More ⇒

9.3. Size:376K elm
elm17412ga.pdf pdf_icon

Single N-channel MOSFET ELM17412GA-S General description Features ELM17412GA-S uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and operation Id=2.1A (Vgs=10V) with gate voltages as low as 2.5V. Rds(on) ... See More ⇒