ELM18801BA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ELM18801BA
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 4.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 17.2 nC
   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 205 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.042 Ohm
   Paquete / Cubierta: TSSOP-8

Búsqueda de reemplazo de MOSFET ELM18801BA

ELM18801BA Datasheet (PDF)

..1. Size:390K elm
elm18801ba.pdf

Dual P-channel MOSFETELM18801BA-SGeneral description Features ELM18801BA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on) and low gate charge. Internal Id=-4.7A (Vgs=-4.5V)ESD protection is included. Rds(on)

7.1. Size:392K elm
elm18806ba.pdf

(common drain)Dual N-channel MOSFET ELM18806BA-SGeneral description Features ELM18806BA-S uses advanced trench technology Vds=20Vto provide excellent Rds(on), low gate charge and Id=7A (Vgs=4.5V)operation with gate voltages as low as 1.8V and internal Rds(on)

8.1. Size:395K elm
elm18814ba.pdf

(common drain)Dual N-channel MOSFET ELM18814BA-SGeneral description Features ELM18814BA-S uses advanced trench technology Vds=20Vto provide excellent Rds(on), low gate charge and Id=7.5A (Vgs=10V)operation with gate voltages as low as 1.8V and internal Rds(on)

8.2. Size:395K elm
elm18822ba.pdf

(common drain)Dual N-channel MOSFET ELM18822BA-SGeneral description Features ELM18822BA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on) and low gate charge. Id=7A (Vgs=10V) Rds(on)

8.3. Size:392K elm
elm18810ba.pdf

(common drain)Dual N-channel MOSFET ELM18810BA-SGeneral description Features ELM18810BA-S uses advanced trench technology Vds=20Vto provide excellent Rds(on), low gate charge and Id=7A (Vgs=4.5V)operation with gate voltages as low as 1.8V and internal Rds(on)

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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