ELM322806A Todos los transistores

 ..1. Size:716K  elm
 elm322806a.pdf

Single N-channel MOSFET ELM322806A-S General description Features ELM322806A-S uses advanced trench technology to Vds=60V provide excellent Rds(on), low gate charge and low gate Id=30A resistance. Rds(on)

 9.1. Size:595K  elm
 elm32424la.pdf

Single N-channel MOSFET ELM32424LA-S General description Features ELM32424LA-S uses advanced trench technology to Vds=25V provide excellent Rds(on), low gate charge and low gate Id=50A resistance. Rds(on)

 9.2. Size:604K  elm
 elm32403la.pdf

Single P-channel MOSFET ELM32403LA-S General description Features ELM32403LA-S uses advanced trench technology to Vds=-40V provide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)

 9.3. Size:430K  elm
 elm32428la.pdf

Single N-channel MOSFET ELM32428LA-S General description Features ELM32428LA-S uses advanced trench technology to Vds=25V provide excellent Rds(on), low gate charge and low gate Id=75A resistance. Rds(on)

 9.4. Size:452K  elm
 elm32414la.pdf

Single N-channel MOSFET ELM32414LA-S General description Features ELM32414LA-S uses advanced trench technology to Vds=25V provide excellent Rds(on), low gate charge and low gate Id=35A resistance. Rds(on)

 9.5. Size:648K  elm
 elm32404la.pdf

Single N-channel MOSFET ELM32404LA-S General description Features ELM32404LA-S uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=12A resistance. Rds(on)

 9.6. Size:801K  elm
 elm32409la-s.pdf

Single P-channel MOSFET ELM32409LA-S General description Features ELM32409LA-S uses advanced trench technology to Vds=-40V provide excellent Rds(on), low gate charge and low gate Id=-10A resistance. Rds(on)

 9.7. Size:886K  elm
 elm321504a.pdf

Single P-channel MOSFET ELM321504A-S General description Features ELM321504A-S uses advanced trench technology to Vds=-40V provide excellent Rds(on), low gate charge and low gate Id=-45A resistance. Rds(on)

 9.8. Size:600K  elm
 elm32434la.pdf

Single N-channel MOSFET ELM32434LA-S General description Features ELM32434LA-S uses advanced trench technology to Vds=600V provide excellent Rds(on), low gate charge and low gate Id=2A resistance. Rds(on)

 9.9. Size:609K  elm
 elm32408la.pdf

Single N-channel MOSFET ELM32408LA-S General description Features ELM32408LA-S uses advanced trench technology to Vds=40V provide excellent Rds(on), low gate charge and low gate Id=10A resistance. Rds(on)

 9.10. Size:592K  elm
 elm32422la.pdf

Single N-channel MOSFET ELM32422LA-S General description Features ELM32422LA-S uses advanced trench technology to Vds=25V provide excellent Rds(on), low gate charge and low gate Id=60A resistance. Rds(on)

 9.11. Size:787K  elm
 elm32d548a.pdf

Single N-channel MOSFET ELM32D548A-S General description Features ELM32D548A-S uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=85A resistance. Rds(on)

 9.12. Size:547K  elm
 elm32430la.pdf

Single N-channel MOSFET ELM32430LA-S General description Features ELM32430LA-S uses advanced trench technology to Vds=25V provide excellent Rds(on), low gate charge and low gate Id=45A resistance. Rds(on)

 9.13. Size:658K  elm
 elm32418la.pdf

Single N-channel MOSFET ELM32418LA-S General description Features ELM32418LA-S uses advanced trench technology to Vds=40V provide excellent Rds(on), low gate charge and low gate Id=20A resistance. Rds(on)

 9.14. Size:982K  elm
 elm32401la-s.pdf

Single P-channel MOSFET ELM32401LA-S General description Features ELM32401LA-S uses advanced trench technology to Vds=-60V provide excellent Rds(on), low gate charge and low gate Id=-7A resistance. Rds(on)

 9.15. Size:625K  elm
 elm32402la.pdf

Single N-channel MOSFET ELM32402LA-S General description Features ELM32402LA-S uses advanced trench technology to Vds=20V provide excellent Rds(on), low gate charge and low gate Id=20A resistance. Rds(on)

 9.16. Size:625K  elm
 elm32420la.pdf

Single N-channel MOSFET ELM32420LA-S General description Features ELM32420LA-S uses advanced trench technology to Vds=20V provide excellent Rds(on), low gate charge and low gate Id=45A resistance. Rds(on)

 9.17. Size:891K  elm
 elm321604a.pdf

Single P-channel MOSFET ELM321604A-S General description Features ELM321604A-S uses advanced trench technology to Vds=-40V provide excellent Rds(on), low gate charge and low gate Id=-43A resistance. Rds(on)

 9.18. Size:390K  elm
 elm323506a.pdf

Single P-channel MOSFET ELM323506A-S General description Features ELM323506A-S uses advanced trench technology to Vds=-60V provide excellent Rds(on), low gate charge and low gate Id=-26A resistance. Rds(on)

 9.19. Size:578K  elm
 elm32405la.pdf

Single P-channel MOSFET ELM32405LA-S General description Features ELM32405LA-S uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-12A resistance. Rds(on)

 9.20. Size:591K  elm
 elm32416la.pdf

Single N-channel MOSFET ELM32416LA-S General description Features ELM32416LA-S uses advanced trench technology to Vds=25V provide excellent Rds(on), low gate charge and low gate Id=46A resistance. Rds(on)

 9.21. Size:601K  elm
 elm32407la.pdf

Single P-channel MOSFET ELM32407LA-S General description Features ELM32407LA-S uses advanced trench technology to Vds=-40V provide excellent Rds(on), low gate charge and low gate Id=-18A resistance. Rds(on)

 9.22. Size:602K  elm
 elm32400la.pdf

Single N-channel MOSFET ELM32400LA-S General description Features ELM32400LA-S uses advanced trench technology to Vds=60V provide excellent Rds(on), low gate charge and low gate Id=10A resistance. Rds(on)

 9.23. Size:473K  elm
 elm32412la.pdf

Single N-channel MOSFET ELM32412LA-S General description Features ELM32412LA-S uses advanced trench technology to Vds=40V provide excellent Rds(on), low gate charge and low gate Id=12A resistance. Rds(on)