ELM322806A
MOSFET. Datasheet pdf. Equivalent
Type Designator: ELM322806A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 30
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 27.4
nC
trⓘ - Rise Time: 6
nS
Cossⓘ -
Output Capacitance: 168
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028
Ohm
Package:
TO-252
ELM322806A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ELM322806A
Datasheet (PDF)
..1. Size:716K elm
elm322806a.pdf 
Single N-channel MOSFETELM322806A-SGeneral description Features ELM322806A-S uses advanced trench technology to Vds=60Vprovide excellent Rds(on), low gate charge and low gate Id=30A resistance. Rds(on)
9.1. Size:595K elm
elm32424la.pdf
Single N-channel MOSFETELM32424LA-SGeneral description Features ELM32424LA-S uses advanced trench technology to Vds=25Vprovide excellent Rds(on), low gate charge and low gate Id=50A resistance. Rds(on)
9.2. Size:604K elm
elm32403la.pdf
Single P-channel MOSFETELM32403LA-SGeneral description Features ELM32403LA-S uses advanced trench technology to Vds=-40Vprovide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)
9.3. Size:430K elm
elm32428la.pdf
Single N-channel MOSFETELM32428LA-SGeneral description Features ELM32428LA-S uses advanced trench technology to Vds=25Vprovide excellent Rds(on), low gate charge and low gate Id=75A resistance. Rds(on)
9.4. Size:452K elm
elm32414la.pdf
Single N-channel MOSFETELM32414LA-SGeneral description Features ELM32414LA-S uses advanced trench technology to Vds=25Vprovide excellent Rds(on), low gate charge and low gate Id=35A resistance. Rds(on)
9.5. Size:648K elm
elm32404la.pdf
Single N-channel MOSFETELM32404LA-SGeneral description Features ELM32404LA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=12A resistance. Rds(on)
9.6. Size:801K elm
elm32409la-s.pdf
Single P-channel MOSFETELM32409LA-SGeneral description Features ELM32409LA-S uses advanced trench technology to Vds=-40Vprovide excellent Rds(on), low gate charge and low gate Id=-10A resistance. Rds(on)
9.7. Size:886K elm
elm321504a.pdf
Single P-channel MOSFETELM321504A-SGeneral description Features ELM321504A-S uses advanced trench technology to Vds=-40Vprovide excellent Rds(on), low gate charge and low gate Id=-45A resistance. Rds(on)
9.8. Size:600K elm
elm32434la.pdf
Single N-channel MOSFETELM32434LA-SGeneral description Features ELM32434LA-S uses advanced trench technology to Vds=600Vprovide excellent Rds(on), low gate charge and low gate Id=2A resistance. Rds(on)
9.9. Size:609K elm
elm32408la.pdf
Single N-channel MOSFETELM32408LA-SGeneral description Features ELM32408LA-S uses advanced trench technology to Vds=40Vprovide excellent Rds(on), low gate charge and low gate Id=10A resistance. Rds(on)
9.10. Size:592K elm
elm32422la.pdf
Single N-channel MOSFETELM32422LA-SGeneral description Features ELM32422LA-S uses advanced trench technology to Vds=25Vprovide excellent Rds(on), low gate charge and low gate Id=60A resistance. Rds(on)
9.11. Size:787K elm
elm32d548a.pdf
Single N-channel MOSFETELM32D548A-SGeneral description Features ELM32D548A-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=85A resistance. Rds(on)
9.12. Size:547K elm
elm32430la.pdf
Single N-channel MOSFETELM32430LA-SGeneral description Features ELM32430LA-S uses advanced trench technology to Vds=25Vprovide excellent Rds(on), low gate charge and low gate Id=45A resistance. Rds(on)
9.13. Size:658K elm
elm32418la.pdf
Single N-channel MOSFETELM32418LA-SGeneral description Features ELM32418LA-S uses advanced trench technology to Vds=40Vprovide excellent Rds(on), low gate charge and low gate Id=20A resistance. Rds(on)
9.14. Size:982K elm
elm32401la-s.pdf
Single P-channel MOSFETELM32401LA-SGeneral description Features ELM32401LA-S uses advanced trench technology to Vds=-60Vprovide excellent Rds(on), low gate charge and low gate Id=-7A resistance. Rds(on)
9.15. Size:625K elm
elm32402la.pdf
Single N-channel MOSFETELM32402LA-SGeneral description Features ELM32402LA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=20A resistance. Rds(on)
9.16. Size:625K elm
elm32420la.pdf
Single N-channel MOSFETELM32420LA-SGeneral description Features ELM32420LA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=45A resistance. Rds(on)
9.17. Size:891K elm
elm321604a.pdf
Single P-channel MOSFETELM321604A-SGeneral description Features ELM321604A-S uses advanced trench technology to Vds=-40Vprovide excellent Rds(on), low gate charge and low gate Id=-43A resistance. Rds(on)
9.18. Size:390K elm
elm323506a.pdf
Single P-channel MOSFETELM323506A-SGeneral description Features ELM323506A-S uses advanced trench technology to Vds=-60Vprovide excellent Rds(on), low gate charge and low gate Id=-26A resistance. Rds(on)
9.19. Size:578K elm
elm32405la.pdf
Single P-channel MOSFETELM32405LA-SGeneral description Features ELM32405LA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-12A resistance. Rds(on)
9.20. Size:591K elm
elm32416la.pdf
Single N-channel MOSFETELM32416LA-SGeneral description Features ELM32416LA-S uses advanced trench technology to Vds=25Vprovide excellent Rds(on), low gate charge and low gate Id=46A resistance. Rds(on)
9.21. Size:601K elm
elm32407la.pdf
Single P-channel MOSFETELM32407LA-SGeneral description Features ELM32407LA-S uses advanced trench technology to Vds=-40Vprovide excellent Rds(on), low gate charge and low gate Id=-18A resistance. Rds(on)
9.22. Size:602K elm
elm32400la.pdf
Single N-channel MOSFETELM32400LA-SGeneral description Features ELM32400LA-S uses advanced trench technology to Vds=60Vprovide excellent Rds(on), low gate charge and low gate Id=10A resistance. Rds(on)
9.23. Size:473K elm
elm32412la.pdf
Single N-channel MOSFETELM32412LA-SGeneral description Features ELM32412LA-S uses advanced trench technology to Vds=40Vprovide excellent Rds(on), low gate charge and low gate Id=12A resistance. Rds(on)
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.
