ELM32434LA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ELM32434LA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 50 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 30 nS
Cossⓘ - Capacitancia de salida: 47 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4.4 Ohm
Encapsulados: TO-252
Búsqueda de reemplazo de ELM32434LA MOSFET
- Selecciónⓘ de transistores por parámetros
ELM32434LA datasheet
..1. Size:600K elm
elm32434la.pdf 
Single N-channel MOSFET ELM32434LA-S General description Features ELM32434LA-S uses advanced trench technology to Vds=600V provide excellent Rds(on), low gate charge and low gate Id=2A resistance. Rds(on)
7.1. Size:547K elm
elm32430la.pdf 
Single N-channel MOSFET ELM32430LA-S General description Features ELM32430LA-S uses advanced trench technology to Vds=25V provide excellent Rds(on), low gate charge and low gate Id=45A resistance. Rds(on)
8.1. Size:595K elm
elm32424la.pdf 
Single N-channel MOSFET ELM32424LA-S General description Features ELM32424LA-S uses advanced trench technology to Vds=25V provide excellent Rds(on), low gate charge and low gate Id=50A resistance. Rds(on)
8.2. Size:604K elm
elm32403la.pdf 
Single P-channel MOSFET ELM32403LA-S General description Features ELM32403LA-S uses advanced trench technology to Vds=-40V provide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)
8.3. Size:430K elm
elm32428la.pdf 
Single N-channel MOSFET ELM32428LA-S General description Features ELM32428LA-S uses advanced trench technology to Vds=25V provide excellent Rds(on), low gate charge and low gate Id=75A resistance. Rds(on)
8.4. Size:452K elm
elm32414la.pdf 
Single N-channel MOSFET ELM32414LA-S General description Features ELM32414LA-S uses advanced trench technology to Vds=25V provide excellent Rds(on), low gate charge and low gate Id=35A resistance. Rds(on)
8.5. Size:648K elm
elm32404la.pdf 
Single N-channel MOSFET ELM32404LA-S General description Features ELM32404LA-S uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=12A resistance. Rds(on)
8.6. Size:801K elm
elm32409la-s.pdf 
Single P-channel MOSFET ELM32409LA-S General description Features ELM32409LA-S uses advanced trench technology to Vds=-40V provide excellent Rds(on), low gate charge and low gate Id=-10A resistance. Rds(on)
8.7. Size:609K elm
elm32408la.pdf 
Single N-channel MOSFET ELM32408LA-S General description Features ELM32408LA-S uses advanced trench technology to Vds=40V provide excellent Rds(on), low gate charge and low gate Id=10A resistance. Rds(on)
8.8. Size:592K elm
elm32422la.pdf 
Single N-channel MOSFET ELM32422LA-S General description Features ELM32422LA-S uses advanced trench technology to Vds=25V provide excellent Rds(on), low gate charge and low gate Id=60A resistance. Rds(on)
8.9. Size:658K elm
elm32418la.pdf 
Single N-channel MOSFET ELM32418LA-S General description Features ELM32418LA-S uses advanced trench technology to Vds=40V provide excellent Rds(on), low gate charge and low gate Id=20A resistance. Rds(on)
8.10. Size:982K elm
elm32401la-s.pdf 
Single P-channel MOSFET ELM32401LA-S General description Features ELM32401LA-S uses advanced trench technology to Vds=-60V provide excellent Rds(on), low gate charge and low gate Id=-7A resistance. Rds(on)
8.11. Size:625K elm
elm32402la.pdf 
Single N-channel MOSFET ELM32402LA-S General description Features ELM32402LA-S uses advanced trench technology to Vds=20V provide excellent Rds(on), low gate charge and low gate Id=20A resistance. Rds(on)
8.12. Size:625K elm
elm32420la.pdf 
Single N-channel MOSFET ELM32420LA-S General description Features ELM32420LA-S uses advanced trench technology to Vds=20V provide excellent Rds(on), low gate charge and low gate Id=45A resistance. Rds(on)
8.13. Size:578K elm
elm32405la.pdf 
Single P-channel MOSFET ELM32405LA-S General description Features ELM32405LA-S uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-12A resistance. Rds(on)
8.14. Size:591K elm
elm32416la.pdf 
Single N-channel MOSFET ELM32416LA-S General description Features ELM32416LA-S uses advanced trench technology to Vds=25V provide excellent Rds(on), low gate charge and low gate Id=46A resistance. Rds(on)
8.15. Size:601K elm
elm32407la.pdf 
Single P-channel MOSFET ELM32407LA-S General description Features ELM32407LA-S uses advanced trench technology to Vds=-40V provide excellent Rds(on), low gate charge and low gate Id=-18A resistance. Rds(on)
8.16. Size:602K elm
elm32400la.pdf 
Single N-channel MOSFET ELM32400LA-S General description Features ELM32400LA-S uses advanced trench technology to Vds=60V provide excellent Rds(on), low gate charge and low gate Id=10A resistance. Rds(on)
8.17. Size:473K elm
elm32412la.pdf 
Single N-channel MOSFET ELM32412LA-S General description Features ELM32412LA-S uses advanced trench technology to Vds=40V provide excellent Rds(on), low gate charge and low gate Id=12A resistance. Rds(on)
Otros transistores... ELM32414LA
, ELM32416LA
, ELM32418LA
, ELM32420LA
, ELM32422LA
, ELM32424LA
, ELM32428LA
, ELM32430LA
, AO3407
, ELM32D548A
, ELM33400CA
, ELM33401CA-S
, ELM33402CA
, ELM33403CA
, ELM33404CA
, ELM33405CA
, ELM33407CA
.
History: 4N60KG-TF2-T
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