ELM32434LA. Аналоги и основные параметры
Наименование производителя: ELM32434LA
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 50 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 30 ns
Cossⓘ - Выходная емкость: 47 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 4.4 Ohm
Тип корпуса: TO-252
Аналог (замена) для ELM32434LA
- подборⓘ MOSFET транзистора по параметрам
ELM32434LA даташит
..1. Size:600K elm
elm32434la.pdf 

Single N-channel MOSFET ELM32434LA-S General description Features ELM32434LA-S uses advanced trench technology to Vds=600V provide excellent Rds(on), low gate charge and low gate Id=2A resistance. Rds(on)
7.1. Size:547K elm
elm32430la.pdf 

Single N-channel MOSFET ELM32430LA-S General description Features ELM32430LA-S uses advanced trench technology to Vds=25V provide excellent Rds(on), low gate charge and low gate Id=45A resistance. Rds(on)
8.1. Size:595K elm
elm32424la.pdf 

Single N-channel MOSFET ELM32424LA-S General description Features ELM32424LA-S uses advanced trench technology to Vds=25V provide excellent Rds(on), low gate charge and low gate Id=50A resistance. Rds(on)
8.2. Size:604K elm
elm32403la.pdf 

Single P-channel MOSFET ELM32403LA-S General description Features ELM32403LA-S uses advanced trench technology to Vds=-40V provide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)
8.3. Size:430K elm
elm32428la.pdf 

Single N-channel MOSFET ELM32428LA-S General description Features ELM32428LA-S uses advanced trench technology to Vds=25V provide excellent Rds(on), low gate charge and low gate Id=75A resistance. Rds(on)
8.4. Size:452K elm
elm32414la.pdf 

Single N-channel MOSFET ELM32414LA-S General description Features ELM32414LA-S uses advanced trench technology to Vds=25V provide excellent Rds(on), low gate charge and low gate Id=35A resistance. Rds(on)
8.5. Size:648K elm
elm32404la.pdf 

Single N-channel MOSFET ELM32404LA-S General description Features ELM32404LA-S uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=12A resistance. Rds(on)
8.6. Size:801K elm
elm32409la-s.pdf 

Single P-channel MOSFET ELM32409LA-S General description Features ELM32409LA-S uses advanced trench technology to Vds=-40V provide excellent Rds(on), low gate charge and low gate Id=-10A resistance. Rds(on)
8.7. Size:609K elm
elm32408la.pdf 

Single N-channel MOSFET ELM32408LA-S General description Features ELM32408LA-S uses advanced trench technology to Vds=40V provide excellent Rds(on), low gate charge and low gate Id=10A resistance. Rds(on)
8.8. Size:592K elm
elm32422la.pdf 

Single N-channel MOSFET ELM32422LA-S General description Features ELM32422LA-S uses advanced trench technology to Vds=25V provide excellent Rds(on), low gate charge and low gate Id=60A resistance. Rds(on)
8.9. Size:658K elm
elm32418la.pdf 

Single N-channel MOSFET ELM32418LA-S General description Features ELM32418LA-S uses advanced trench technology to Vds=40V provide excellent Rds(on), low gate charge and low gate Id=20A resistance. Rds(on)
8.10. Size:982K elm
elm32401la-s.pdf 

Single P-channel MOSFET ELM32401LA-S General description Features ELM32401LA-S uses advanced trench technology to Vds=-60V provide excellent Rds(on), low gate charge and low gate Id=-7A resistance. Rds(on)
8.11. Size:625K elm
elm32402la.pdf 

Single N-channel MOSFET ELM32402LA-S General description Features ELM32402LA-S uses advanced trench technology to Vds=20V provide excellent Rds(on), low gate charge and low gate Id=20A resistance. Rds(on)
8.12. Size:625K elm
elm32420la.pdf 

Single N-channel MOSFET ELM32420LA-S General description Features ELM32420LA-S uses advanced trench technology to Vds=20V provide excellent Rds(on), low gate charge and low gate Id=45A resistance. Rds(on)
8.13. Size:578K elm
elm32405la.pdf 

Single P-channel MOSFET ELM32405LA-S General description Features ELM32405LA-S uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-12A resistance. Rds(on)
8.14. Size:591K elm
elm32416la.pdf 

Single N-channel MOSFET ELM32416LA-S General description Features ELM32416LA-S uses advanced trench technology to Vds=25V provide excellent Rds(on), low gate charge and low gate Id=46A resistance. Rds(on)
8.15. Size:601K elm
elm32407la.pdf 

Single P-channel MOSFET ELM32407LA-S General description Features ELM32407LA-S uses advanced trench technology to Vds=-40V provide excellent Rds(on), low gate charge and low gate Id=-18A resistance. Rds(on)
8.16. Size:602K elm
elm32400la.pdf 

Single N-channel MOSFET ELM32400LA-S General description Features ELM32400LA-S uses advanced trench technology to Vds=60V provide excellent Rds(on), low gate charge and low gate Id=10A resistance. Rds(on)
8.17. Size:473K elm
elm32412la.pdf 

Single N-channel MOSFET ELM32412LA-S General description Features ELM32412LA-S uses advanced trench technology to Vds=40V provide excellent Rds(on), low gate charge and low gate Id=12A resistance. Rds(on)
Другие MOSFET... ELM32414LA
, ELM32416LA
, ELM32418LA
, ELM32420LA
, ELM32422LA
, ELM32424LA
, ELM32428LA
, ELM32430LA
, AO3407
, ELM32D548A
, ELM33400CA
, ELM33401CA-S
, ELM33402CA
, ELM33403CA
, ELM33404CA
, ELM33405CA
, ELM33407CA
.
History: 2SK2957L
| NCE30H12K
| NTR4101P
| STB55NF06-1
| SI1028X
| NIF5002NT1G