ELM33405CA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ELM33405CA
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 36 nS
   Cossⓘ - Capacitancia de salida: 220 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
   Paquete / Cubierta: SOT-23

Búsqueda de reemplazo de MOSFET ELM33405CA

ELM33405CA Datasheet (PDF)

..1. Size:592K elm
elm33405ca.pdf

Single P-channel MOSFETELM33405CA-SGeneral description Features ELM33405CA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-2A resistance. Rds(on)

7.1. Size:486K elm
elm33403ca.pdf

Single P-channel MOSFETELM33403CA-SGeneral description Features ELM33403CA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-4A resistance. Rds(on)

7.2. Size:599K elm
elm33408ca.pdf

Single N-channel MOSFETELM33408CA-SGeneral description Features ELM33408CA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=3A resistance. Rds(on)

7.3. Size:588K elm
elm33407ca.pdf

Single P-channel MOSFETELM33407CA-SGeneral description Features ELM33407CA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-3A resistance. Rds(on)

7.4. Size:981K elm
elm33401ca-s.pdf

Single P-channel MOSFETELM33401CA-SGeneral description Features ELM33401CA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-3A resistance. Rds(on)

7.5. Size:607K elm
elm33404ca.pdf

Single N-channel MOSFETELM33404CA-SGeneral description Features ELM33404CA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=3A resistance. Rds(on)

7.6. Size:599K elm
elm33402ca.pdf

Single N-channel MOSFETELM33402CA-SGeneral description Features ELM33402CA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=3A resistance. Rds(on)

7.7. Size:480K elm
elm33400ca.pdf

Single N-channel MOSFETELM33400CA-SGeneral description Features ELM33400CA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=6A resistance. Rds(on)

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: