ELM33405CA
MOSFET. Datasheet pdf. Equivalent
Type Designator: ELM33405CA
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 5.8
nC
trⓘ - Rise Time: 36
nS
Cossⓘ -
Output Capacitance: 220
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15
Ohm
Package:
SOT-23
ELM33405CA
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ELM33405CA
Datasheet (PDF)
..1. Size:592K elm
elm33405ca.pdf 
Single P-channel MOSFETELM33405CA-SGeneral description Features ELM33405CA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-2A resistance. Rds(on)
7.1. Size:486K elm
elm33403ca.pdf
Single P-channel MOSFETELM33403CA-SGeneral description Features ELM33403CA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-4A resistance. Rds(on)
7.2. Size:599K elm
elm33408ca.pdf
Single N-channel MOSFETELM33408CA-SGeneral description Features ELM33408CA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=3A resistance. Rds(on)
7.3. Size:588K elm
elm33407ca.pdf
Single P-channel MOSFETELM33407CA-SGeneral description Features ELM33407CA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-3A resistance. Rds(on)
7.4. Size:981K elm
elm33401ca-s.pdf
Single P-channel MOSFETELM33401CA-SGeneral description Features ELM33401CA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-3A resistance. Rds(on)
7.5. Size:607K elm
elm33404ca.pdf
Single N-channel MOSFETELM33404CA-SGeneral description Features ELM33404CA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=3A resistance. Rds(on)
7.6. Size:599K elm
elm33402ca.pdf
Single N-channel MOSFETELM33402CA-SGeneral description Features ELM33402CA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=3A resistance. Rds(on)
7.7. Size:480K elm
elm33400ca.pdf
Single N-channel MOSFETELM33400CA-SGeneral description Features ELM33400CA-S uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=6A resistance. Rds(on)
Datasheet: FMP36-015P
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