2SK880GR Todos los transistores

 8.1. Size:294K  toshiba
 2sk880.pdf

2SK880 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK880 Audio Frequency Low Noise Amplifier Applications Unit mm High Yfs Yfs = 15 mS (typ.) at VDS = 10 V, VGS = 0 High breakdown voltage VGDS = -50 V Low noise NF = 1.0dB (typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 k High input impedance IGSS = -1 nA (max) at VGS = -30 V

 9.1. Size:60K  toshiba
 2sk889.pdf

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 2sk882.pdf

2SK882 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK882 FM Tuner, VHF RF Amplifier Applications Unit mm Low reverse transfer capacitance Crss = 0.025 pF (typ.) Low noise figure NF = 1.7dB (typ.) High power gain G = 28dB (typ.) ps Recommend operation voltage 5 15 V Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit

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 2sk888.pdf

( DataSheet www.DataSheet4U.com ) www.DataSheet4U.com www.DataSheet4U.com

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 2sk881.pdf

2SK881 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK881 FM Tuner Applications Unit mm VHF Band Amplifier Applications Low noise figure NF = 2.5dB (typ.) (f = 100 MHz) High forward transfer admittance Yfs = 9 mS (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Gate-drain voltage VGDO -18 V Gate current IG 10 mA