2SK880GR JFET Datasheet: N-Ch, 50V, 0.0065A. Full specification with pinout and replacement list

2SK880GR Specs and Replacement

Type Designator: 2SK880GR

Type of Transistor: JFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Id| ⓘ - Maximum Drain Current: 0.0065 A

Tj ⓘ - Maximum Junction Temperature: 125 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 250 Ohm

Package: USM SC70

2SK880GR substitution

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2SK880GR datasheet

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2SK880 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK880 Audio Frequency Low Noise Amplifier Applications Unit mm High Yfs Yfs = 15 mS (typ.) at VDS = 10 V, VGS = 0 High breakdown voltage VGDS = -50 V Low noise NF = 1.0dB (typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 k High input impedance IGSS = -1 nA (max) at VGS = -30 V... See More ⇒

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2SK882 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK882 FM Tuner, VHF RF Amplifier Applications Unit mm Low reverse transfer capacitance Crss = 0.025 pF (typ.) Low noise figure NF = 1.7dB (typ.) High power gain G = 28dB (typ.) ps Recommend operation voltage 5 15 V Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit ... See More ⇒

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