All MOSFET. 2SK880GR Datasheet

 

2SK880GR Datasheet and Replacement


   Type Designator: 2SK880GR
   Type of Transistor: JFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Id| ⓘ - Maximum Drain Current: 0.0065 A
   Tj ⓘ - Maximum Junction Temperature: 125 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 250 Ohm
   Package: USM SC70
 

 2SK880GR substitution

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2SK880GR Datasheet (PDF)

 8.1. Size:294K  toshiba
 2sk880.pdf pdf_icon

2SK880GR

2SK880 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK880 Audio Frequency Low Noise Amplifier Applications Unit: mm High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 High breakdown voltage: VGDS = -50 V Low noise: NF = 1.0dB (typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 k High input impedance: IGSS = -1 nA (max) at VGS = -30 V

 9.1. Size:60K  toshiba
 2sk889.pdf pdf_icon

2SK880GR

 9.2. Size:174K  toshiba
 2sk882.pdf pdf_icon

2SK880GR

2SK882 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK882 FM Tuner, VHF RF Amplifier Applications Unit: mm Low reverse transfer capacitance: Crss = 0.025 pF (typ.) Low noise figure: NF = 1.7dB (typ.) High power gain: G = 28dB (typ.) ps Recommend operation voltage: 5~15 V Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating Unit

 9.3. Size:110K  toshiba
 2sk888.pdf pdf_icon

2SK880GR

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Keywords - 2SK880GR MOSFET datasheet

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