RFP8P05 Todos los transistores

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RFP8P05 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RFP8P05

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 48 W

Tensión drenaje-fuente (Vds): 50 V

Tensión umbral compuerta-fuente Vgs(th): 4 V

Corriente continua de drenaje (Id): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.3 Ohm

Empaquetado / Estuche: TO220AB

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RFP8P05 Datasheet (PDF)

1.1. rfd8p05-sm rfp8p05.pdf Size:57K _intersil

RFP8P05
RFP8P05

RFD8P05, RFD8P05SM, RFP8P05 Data Sheet July 1999 File Number 2384.2 8A, 50V, 0.300 Ohm, P-Channel Power Features MOSFETs • 8A, 50V These products are P-Channel power MOSFETs • rDS(ON) = 0.300Ω manufactured using the MegaFET process. This process, • UIS SOA Rating Curve which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting i

4.1. rfd8p06e-sm rfp8p06e.pdf Size:134K _fairchild_semi

RFP8P05
RFP8P05

RFD8P06E, RFD8P06ESM, RFP8P06E Data Sheet January 2002 8A, 60V, 0.300 Ohm, P-Channel Power Features MOSFETs • 8A, 60V These are P-Channel power MOSFETs manufactured using • rDS(ON) = 0.300Ω the MegaFET process. This process, which uses feature • Temperature Compensating PSPICE® Model sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, r

4.2. rfd8p06le-sm rfp8p06le.pdf Size:106K _intersil

RFP8P05
RFP8P05

RFD8P06LE, RFD8P06LESM, RFP8P06LE Data Sheet July 1999 File Number 4273.1 8A, 60V, 0.300 Ohm, ESD Rated, Logic Features Level, P-Channel Power MOSFET • 8A, 60V These products are P-Channel power MOSFETs • rDS(ON) = 0.300Ω manufactured using the MegaFET process. This process, • 2kV ESD Protected which uses feature sizes approaching those of LSI circuits, gives optimum utilizati

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