RFP8P05 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RFP8P05
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 48 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 30 nS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
Encapsulados: TO220AB
Búsqueda de reemplazo de RFP8P05 MOSFET
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RFP8P05 datasheet
rfd8p05-sm rfp8p05.pdf
RFD8P05, RFD8P05SM, RFP8P05 Data Sheet July 1999 File Number 2384.2 8A, 50V, 0.300 Ohm, P-Channel Power Features MOSFETs 8A, 50V These products are P-Channel power MOSFETs rDS(ON) = 0.300 manufactured using the MegaFET process. This process, UIS SOA Rating Curve which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting i
rfd8p06e-sm rfp8p06e.pdf
RFD8P06E, RFD8P06ESM, RFP8P06E Data Sheet January 2002 8A, 60V, 0.300 Ohm, P-Channel Power Features MOSFETs 8A, 60V These are P-Channel power MOSFETs manufactured using rDS(ON) = 0.300 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, r
rfd8p06le-sm rfp8p06le.pdf
RFD8P06LE, RFD8P06LESM, RFP8P06LE Data Sheet July 1999 File Number 4273.1 8A, 60V, 0.300 Ohm, ESD Rated, Logic Features Level, P-Channel Power MOSFET 8A, 60V These products are P-Channel power MOSFETs rDS(ON) = 0.300 manufactured using the MegaFET process. This process, 2kV ESD Protected which uses feature sizes approaching those of LSI circuits, gives optimum utilizati
Otros transistores... RFP50N05L, RFP50N06, RFP50N06LE, RFP60P03, RFP70N03, RFP70N06, RFP7N10LE, RFP8N20L, IRF1405, RFP8P06E, RFP8P06LE, RFP8P10, RFT1P06E, RFT2P03L, RFT3055LE, RFW2N06RLE, RLP1N06CLE
History: 2SK3418 | 2SK3419
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