RFP8P05 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RFP8P05

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 48 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 30 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm

Encapsulados: TO220AB

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RFP8P05 datasheet

 ..1. Size:57K  intersil
rfd8p05-sm rfp8p05.pdf pdf_icon

RFP8P05

RFD8P05, RFD8P05SM, RFP8P05 Data Sheet July 1999 File Number 2384.2 8A, 50V, 0.300 Ohm, P-Channel Power Features MOSFETs 8A, 50V These products are P-Channel power MOSFETs rDS(ON) = 0.300 manufactured using the MegaFET process. This process, UIS SOA Rating Curve which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting i

 8.1. Size:134K  fairchild semi
rfd8p06e-sm rfp8p06e.pdf pdf_icon

RFP8P05

RFD8P06E, RFD8P06ESM, RFP8P06E Data Sheet January 2002 8A, 60V, 0.300 Ohm, P-Channel Power Features MOSFETs 8A, 60V These are P-Channel power MOSFETs manufactured using rDS(ON) = 0.300 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, r

 8.2. Size:279K  harris semi
rfm8p08 rfm8p10 rfp8p08.pdf pdf_icon

RFP8P05

 8.3. Size:106K  intersil
rfd8p06le-sm rfp8p06le.pdf pdf_icon

RFP8P05

RFD8P06LE, RFD8P06LESM, RFP8P06LE Data Sheet July 1999 File Number 4273.1 8A, 60V, 0.300 Ohm, ESD Rated, Logic Features Level, P-Channel Power MOSFET 8A, 60V These products are P-Channel power MOSFETs rDS(ON) = 0.300 manufactured using the MegaFET process. This process, 2kV ESD Protected which uses feature sizes approaching those of LSI circuits, gives optimum utilizati

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