RFP8P05. Аналоги и основные параметры

Наименование производителя: RFP8P05

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 48 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 50 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 30 ns

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.3 Ohm

Тип корпуса: TO220AB

Аналог (замена) для RFP8P05

- подборⓘ MOSFET транзистора по параметрам

 

RFP8P05 даташит

 ..1. Size:57K  intersil
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RFD8P05, RFD8P05SM, RFP8P05 Data Sheet July 1999 File Number 2384.2 8A, 50V, 0.300 Ohm, P-Channel Power Features MOSFETs 8A, 50V These products are P-Channel power MOSFETs rDS(ON) = 0.300 manufactured using the MegaFET process. This process, UIS SOA Rating Curve which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting i

 8.1. Size:134K  fairchild semi
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RFD8P06E, RFD8P06ESM, RFP8P06E Data Sheet January 2002 8A, 60V, 0.300 Ohm, P-Channel Power Features MOSFETs 8A, 60V These are P-Channel power MOSFETs manufactured using rDS(ON) = 0.300 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, r

 8.2. Size:279K  harris semi
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 8.3. Size:106K  intersil
 rfd8p06le-sm rfp8p06le.pdf pdf_icon

RFP8P05

RFD8P06LE, RFD8P06LESM, RFP8P06LE Data Sheet July 1999 File Number 4273.1 8A, 60V, 0.300 Ohm, ESD Rated, Logic Features Level, P-Channel Power MOSFET 8A, 60V These products are P-Channel power MOSFETs rDS(ON) = 0.300 manufactured using the MegaFET process. This process, 2kV ESD Protected which uses feature sizes approaching those of LSI circuits, gives optimum utilizati

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