STP10NB50 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STP10NB50 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 135 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 10.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 13 nS
Cossⓘ - Capacitancia de salida: 210 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
Encapsulados: TO220
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STP10NB50 datasheet
..1. Size:339K st
stp10nb50 stp10nb50fp.pdf 
STP10NB50 STP10NB50FP N - CHANNEL 500V - 0.55 - 10.6A - TO-220/TO-220FP PowerMESH MOSFET TYPE V R I DSS DS(on) D STP10NB50 500 V
7.1. Size:182K st
stp10nb20.pdf
STP10NB20 STP10NB20FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET PRELIMINARY DATA TYPE V R I DSS DS(on) D STP10NB20 200 V
8.1. Size:1627K st
stb10n60m2 std10n60m2 stp10n60m2 stu10n60m2.pdf
STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2 N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in D PAK, DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB TAB RDS(on) 3 Order codes VDS @ TJmax max ID 1 3 1 DPAK STB10N60M2 D 2 PAK STD10N60M2 650 V 0.600 7.5 A STP10N60M2 TAB TAB STU10N60M2 3 Extremely low gate ch
8.2. Size:384K st
stp10nk70z.pdf
STP10NK70Z STP10NK70ZFP N-CHANNEL 700V - 0.75 - 8.6A TO-220/TO-220FP Zener-Protected SuperMESH Power MOSFET TYPE VDSS RDS(on) ID Pw STP10NK70Z 700 V
8.3. Size:901K st
std10nm60n stf10nm60n stp10nm60n stu10nm60n.pdf
STD10NM60N, STF10NM60N STP10NM60N, STU10NM60N N-channel 600 V, 0.53 , 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET Features VDSS RDS(on) Order codes ID Pw @TJmax max. 3 3 STD10NM60N 70 W 2 2 1 1 STF10NM60N 25 W TO-220 TO-220FP 650 V
8.4. Size:455K st
stp10nk80zfp stp10nk80z stw10nk80z.pdf
STP10NK80ZFP STP10NK80Z - STW10NK80Z N-channel 800V - 0.78 - 9A - TO-220/FP-TO-247 Zener-protected superMESHTM MOSFET General features Type VDSS RDS(on) ID Pw STP10NK80Z 800V
8.5. Size:997K st
std10nm60n stf10nm60n stp10nm60n stu10nm60n 2.pdf
STD10NM60N, STF10NM60N STP10NM60N, STU10NM60N N-channel 600 V, 0.53 , 8 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET Features VDSS RDS(on) Type ID Pw @TJmax max. 3 3 STD10NM60N 70 W 2 2 1 1 STF10NM60N 25 W TO-220 TO-220FP 650 V
8.6. Size:1328K st
stb10n95k5 stf10n95k5 stp10n95k5 stw10n95k5.pdf
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5 N-channel 950 V, 0.65 typ., 8 A Zener-protected SuperMESH 5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 Datasheet - production data TAB Features 3 Order codes VDS RDS(on) max ID PTOT 1 2 3 D PAK STB10N95K5 130 W 2 1 STF10N95K5 30 W TO-220FP 950 V 0.8 8 A STP10N95K5 TAB 130 W STW10N95K5 Worldwide best FOM
8.7. Size:439K st
stp10nk80z stp10nk80zfp stw10nk80z.pdf
STP10NK80Z, STP10NK80ZFP, STW10NK80Z N-channel 800 V, 0.78 , 9 A Zener-protected SuperMESH Power MOSFETs in TO-220, TO-220FP and TO-247 packages Datasheet production data Features TAB Type VDSS RDS(on) ID Pw STP10NK80Z 800V
8.9. Size:938K st
stb10nk60z stp10nk60z stp10nk60zfp stw10nk60z.pdf
STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z N-channel 600 V, 0.65 typ., 10 A SuperMESH Power MOSFET in I2PAK, D2PAK, TO-220, TO-220FP, TO-247 packages Datasheet - production data Features TAB RDS(on) Type VDSS ID Pw max TAB 3 3 2 STB10NK60Z-1 600 V
8.10. Size:458K st
stp10nk80z.pdf
STP10NK80Z - STP10NK80ZFP STW10NK80Z N-CHANNEL 800V - 0.78 - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE VDSS RDS(on) ID Pw STP10NK80Z 800 V
8.11. Size:274K st
stp10nk70zfp stp10nk70z.pdf
STP10NK70ZFP STP10NK70Z N-CHANNEL 700V - 0.75 - 8.6A - TO220-TO220FP Zener-Protected SuperMESH MOSFET General features Package VDSS RDS(on) ID Type Pw STP10NK70Z 700 V
8.12. Size:1072K st
std10nm60n stf10nm60n sti10nm60n stp10nm60n stu10nm60n.pdf
STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N, STU10NM60N N-channel 600 V, 0.53 typ., 10 A MDmesh II Power MOSFET in DPAK, TO-220FP, I PAK, TO-220 and IPAK packages Datasheet production data Features TAB TAB VDSS RDS(on) Order codes ID Pw @TJmax max. 3 1 3 STD10NM60N 70 W 3 2 2 1 DPAK 1 STF10NM60N 25 W I PAK TO-220FP STI10NM60N 650 V
8.13. Size:525K st
std10nm65n stf10nm65n stp10nm65n stu10nm65n.pdf
STD10NM65N - STF10NM65N STP10NM65N - STU10NM65N N-channel 650 V, 0.43 , 9 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 3 1 2 STD10NM65N 710 V
8.14. Size:395K st
stp10na40.pdf
STP10NA40 STP10NA40FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP10NA40 400 V
8.15. Size:948K st
stf10n62k3 stfi10n62k3 sti10n62k3 stp10n62k3.pdf
STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3 N-channel 620 V, 0.68 typ., 8.4 A SuperMESH3 Power MOSFET in TO-220FP, I PAKFP, I PAK, TO-220 packages Datasheet - production data Features RDS(on) Type VDSS max ID Pw 3 2 STF10N62K3 1 1 2 8.4 A(1) 30 W 3 TO-220FP STFI10N62K3 I PAKFP 620 V
8.16. Size:503K st
stp10nk50z.pdf
STP10NK50Z N-channel 500 V, 0.55 , 9 A Zener-protected SuperMESH Power MOSFETs in TO-220 package Datasheet obsolete product Features Order code VDSS RDS(on) max ID PTOT TAB STP10NK50Z 500 V
8.17. Size:1129K st
std10nm60nd stf10nm60nd stp10nm60nd.pdf
STD10NM60ND, STF10NM60ND, STP10NM60ND N-channel 600 V, 0.57 typ., 8 A, FDmesh II Power MOSFETs in DPAK, TO-220FP and TO-220 packages Datasheet - production data Features V @ R DS DS(on) Order code I P D TOT T max. jmax. STD10NM60ND 70 W STF10NM60ND 650 V 0.60 8 A 25 W STP10NM60ND 70 W Fast-recovery body diode Low gate charge and input capacitance
8.18. Size:528K st
stp10nk50z stf10nk50z.pdf
STP10NK50Z STF10NK50Z N-CHANNEL 500V - 0.55 - 9A TO-220 / TO-220FP Zener-Protected SuperMESH MOSFET Table 1 General Features Figure 1 Package TYPE VDSS RDS(on) ID Pw STP10NK50Z 500 V
8.19. Size:858K st
stb10nk60z stp10nk60z stw10nk60z.pdf
STB10NK60Z, STP10NK60Z STW10NK60Z N-channel 650 V, 0.65 , 10 A, SuperMESH Power MOSFET Zener-protected I2PAK, D2PAK, TO-220, TO-220FP, TO-247 Features RDS(on) Type VDSS ID Pw max 3 STB10NK60Z-1 600 V
8.20. Size:149K st
stp10nc50fp stp10nc50.pdf
STP10NC50 STP10NC50FP N - CHANNEL 500V - 0.48 - 10A - TO-220/TO-220FP PowerMESH MOSFET PRELIMINARY DATA TYPE V R I DSS DS(on) D STP10NC50 500 V
8.21. Size:718K st
stf10n105k5 stp10n105k5 stw10n105k5.pdf
STF10N105K5, STP10N105K5, STW10N105K5 N-channel 1050 V, 1 typ., 6 A MDmesh K5 Power MOSFETs in TO-220, TO-220FP and TO-247 packages Datasheet - production data Features TAB R DS(on) Order codes V I P DS D TOT max. STF10N105K5 30 W 3 3 2 2 1 STP10N105K5 1050 V 1.3 6 A 130 W 1 TO-220 STW10N105K5 130 W TO-220FP Industry s lowest RDS(on) 3 In
8.22. Size:280K st
stp10nk70z stp10nk70zfp.pdf
STP10NK70ZFP STP10NK70Z N-CHANNEL 700V - 0.75 - 8.6A - TO220-TO220FP Zener-Protected SuperMESH MOSFET General features Package VDSS RDS(on) ID Type Pw STP10NK70Z 700 V
8.23. Size:684K st
stp10nk60z.pdf
STP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z N-CHANNEL 600V-0.65 -10A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE VDSS RDS(on) ID Pw STP10NK60Z 600 V
8.24. Size:951K st
std10nm50n stf10nm50n stp10nm50n.pdf
STD10NM50N STF10NM50N, STP10NM50N N-channel 500 V, 0.53 , 7 A TO-220, TO-220FP, DPAK MDmesh II Power MOSFET Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 2 2 1 STD10NM50N 1 TO-220FP TO-220 STF10NM50N 550 V
8.26. Size:938K st
stb10nk60z-1 stb10nk60zt4 stp10nk60zfp.pdf
STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z N-channel 600 V, 0.65 typ., 10 A SuperMESH Power MOSFET in I2PAK, D2PAK, TO-220, TO-220FP, TO-247 packages Datasheet - production data Features TAB RDS(on) Type VDSS ID Pw max TAB 3 3 2 STB10NK60Z-1 600 V
8.27. Size:348K st
stp10n80k5.pdf
STP10N80K5 Datasheet N-channel 800 V, 0.470 typ., 9 A MDmesh K5 Power MOSFET in a TO-220 package Features Order code VDS RDS(on ) max. ID PTOT TAB STP10N80K5 800 V 0.600 9 A 130 W Industry s lowest RDS(on) x area 3 2 Industry s best FoM (figure of merit) 1 TO-220 Ultra-low gate charge 100% avalanche tested Zener-protected D(2, TAB) Applications
8.28. Size:201K inchange semiconductor
stp10nk60zfp.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP10NK60ZFP FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATIN
8.30. Size:253K inchange semiconductor
stp10nk70zfp.pdf
isc N-Channel MOSFET Transistor STP10NK70ZFP FEATURES Drain Current I = 8.6A@ T =25 D C Drain Source Voltage V = 700V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max)@V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so
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