STP10NB50 Todos los transistores

 

STP10NB50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STP10NB50

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 135 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 10.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Carga de compuerta (Qg): 38 nC

Tiempo de elevación (tr): 13 nS

Conductancia de drenaje-sustrato (Cd): 210 pF

Resistencia drenaje-fuente RDS(on): 0.6 Ohm

Empaquetado / Estuche: TO220

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STP10NB50 Datasheet (PDF)

1.1. stp10nb50 stp10nb50fp.pdf Size:339K _st

STP10NB50
STP10NB50

STP10NB50 STP10NB50FP ® N - CHANNEL 500V - 0.55Ω - 10.6A - TO-220/TO-220FP PowerMESH MOSFET TYPE V R I DSS DS(on) D STP10NB50 500 V < 0.60 Ω 10.6 A STP10NB50FP 500 V < 0.60 Ω 10.6 A TYPICAL R = 0.55 Ω DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES 3 3 GATE CHARGE MINIMIZED 2 2 1 1 DESCRIPTION Using the latest hi

3.1. stp10nb20.pdf Size:182K _st

STP10NB50
STP10NB50

STP10NB20 STP10NB20FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET PRELIMINARY DATA TYPE V R I DSS DS(on) D STP10NB20 200 V < 0.40 Ω 10 A STP10NB20FP 200 V < 0.40 Ω 6 A TYPICAL R = 0.25 Ω DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest high voltage MESH

 4.1. stp10nk50z.pdf Size:503K _st

STP10NB50
STP10NB50

STP10NK50Z N-channel 500 V, 0.55 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220 package Datasheet — obsolete product Features Order code VDSS RDS(on) max ID PTOT TAB STP10NK50Z 500 V < 0.7 Ω 9 A 125 W ■ Extremely high dv/dt capability ■ 100% avalanche tested 3 2 1 ■ Gate charge minimized TO-220 ■ Very low intrinsic capacitances ■ Very good manufacturi

4.2. std10nm60n stf10nm60n stp10nm60n stu10nm60n.pdf Size:901K _st

STP10NB50
STP10NB50

STD10NM60N, STF10NM60N STP10NM60N, STU10NM60N N-channel 600 V, 0.53 Ω, 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh™ II Power MOSFET Features VDSS RDS(on) Order codes ID Pw @TJmax max. 3 3 STD10NM60N 70 W 2 2 1 1 STF10NM60N 25 W TO-220 TO-220FP 650 V < 0.55 Ω 10 A STP10NM60N 70 W STU10NM60N 3 ■ 100% avalanche tested 2 3 1 1 ■ Low input capacitance and gate charge

 4.3. stb10n65k3 stfi10n65k3 stp10n65k3.pdf Size:1300K _st

STP10NB50
STP10NB50

STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3 N-channel 650 V, 0.75 Ω typ., 10 A SuperMESH3™ Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packages Datasheet - production data Features TAB Order codes VDS RDS(on) max ID PTOT 3 1 3 STB10N65K3 150 W 2 D2PAK 1 STF10N65K3 TO-220FP 650 V 1 Ω 10 A 35 W STFI10N65K3 TAB STP10N65K3 150 W • 100% avalanche tested 3

4.4. std10nm50n stf10nm50n stp10nm50n.pdf Size:951K _st

STP10NB50
STP10NB50

STD10NM50N STF10NM50N, STP10NM50N N-channel 500 V, 0.53 Ω, 7 A TO-220, TO-220FP, DPAK MDmesh™ II Power MOSFET Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 2 2 1 STD10NM50N 1 TO-220FP TO-220 STF10NM50N 550 V < 0.63 Ω 7 A STP10NM50N ■ 100% avalanche tested 3 ■ Low input capacitance and gate charge 1 ■ Low gate input resistance DPAK Application Switching app

 4.5. stp10nk70z stp10nk70zfp.pdf Size:280K _st

STP10NB50
STP10NB50

STP10NK70ZFP STP10NK70Z N-CHANNEL 700V - 0.75Ω - 8.6A - TO220-TO220FP Zener-Protected SuperMESH™ MOSFET General features Package VDSS RDS(on) ID Type Pw STP10NK70Z 700 V <0.85 Ω 8.6 A 110 W STP10NK70ZFP 700 V <0.85 Ω 8.6 A 35 W EXTREMELY HIGH dv/dt CAPABILITY 3 3 2 2 IMPROVED ESD CAPABILITY 1 1 TO-220 100% AVALANCHE TESTED TO-220FP GATE CHARGE MINIMIZED VERY LOW IN

4.6. stp10nk60z.pdf Size:684K _st

STP10NB50
STP10NB50

STP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP10NK60Z 600 V < 0.75 Ω 10 A 115 W STP10NK60ZFP 600 V < 0.75 Ω 10 A 35 W STB10NK60Z 600 V < 0.75 Ω 10 A 115 W 3 STB10NK60Z-1 600 V < 0.75 Ω 10 A 115 W 2 1 STW10NK60Z 600 V < 0.75 Ω 10 A 156 W TO-220 TO-220FP T

4.7. stp10na40.pdf Size:395K _st

STP10NB50
STP10NB50

STP10NA40 STP10NA40FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP10NA40 400 V < 0.55 Ω 10 A STP10NA40FI 400 V < 0.55 Ω 6 A TYPICAL R = 0.46 Ω DS(on) ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW INTRINSIC CAPACITANCES 2 2 1 1 GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTA

4.8. stb10nk60z-1 stb10nk60zt4 stp10nk60zfp.pdf Size:938K _st

STP10NB50
STP10NB50

STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z N-channel 600 V, 0.65 Ω typ., 10 A SuperMESH™ Power MOSFET in I2PAK, D2PAK, TO-220, TO-220FP, TO-247 packages Datasheet - production data Features TAB RDS(on) Type VDSS ID Pw max TAB 3 3 2 STB10NK60Z-1 600 V < 0.75 Ω 10 A 115 W 2 1 1 TO-220FP STB10NK60ZT4 600 V < 0.75 Ω 10 A 115 W I2PAK STP10NK60Z 600 V < 0.75 Ω 10 A 11

4.9. stp10nk80z.pdf Size:458K _st

STP10NB50
STP10NB50

STP10NK80Z - STP10NK80ZFP STW10NK80Z N-CHANNEL 800V - 0.78Ω - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP10NK80Z 800 V < 0.90 Ω 9 A 160 W STP10NK80ZFP 800 V < 0.90 Ω 9 A 40 W STW10NK80Z 800 V < 0.90 Ω 9 A 160 W 3 2 TYPICAL RDS(on) = 0.78 Ω 1 EXTREMELY HIGH dv/dt CAPABILITY TO-220 TO-220FP 100% AVALANCHE TESTED GATE

4.10. std10nm65n stf10nm65n stp10nm65n stu10nm65n.pdf Size:525K _st

STP10NB50
STP10NB50

STD10NM65N - STF10NM65N STP10NM65N - STU10NM65N N-channel 650 V, 0.43 Ω, 9 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 3 1 2 STD10NM65N 710 V < 0.48 Ω 9 A 1 IPAK STF10NM65N 710 V < 0.48 Ω 9 A(1) TO-220 STP10NM65N 710 V < 0.48 Ω 9 A STU10NM65N 710 V < 0.48 Ω 9 A 3 1. Limited only by maximum temperature all

4.11. stp10nk70z.pdf Size:384K _st

STP10NB50
STP10NB50

STP10NK70Z STP10NK70ZFP N-CHANNEL 700V - 0.75Ω - 8.6A TO-220/TO-220FP Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP10NK70Z 700 V < 0.85 Ω 8.6 A 150 W STP10NK70ZFP 700 V < 0.85 Ω 8.6 A 35 W TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 3 2 100% AVALANCHE RATED 1 GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACIT

4.12. stb10nk60z stp10nk60z stw10nk60z.pdf Size:858K _st

STP10NB50
STP10NB50

STB10NK60Z, STP10NK60Z STW10NK60Z N-channel 650 V, 0.65 Ω, 10 A, SuperMESH™ Power MOSFET Zener-protected I2PAK, D2PAK, TO-220, TO-220FP, TO-247 Features RDS(on) Type VDSS ID Pw max 3 STB10NK60Z-1 600 V < 0.75 Ω 10 A 115 W 2 1 TO-247 STB10NK60Z 600 V < 0.75 Ω 10 A 115 W TO-262 STP10NK60Z 600 V < 0.75 Ω 10 A 115 W 3 1 STP10NK60ZFP 600 V < 0.75 Ω 10 A 35 W TO-263 S

4.13. stp10nk80zfp stp10nk80z stw10nk80z.pdf Size:455K _st

STP10NB50
STP10NB50

STP10NK80ZFP STP10NK80Z - STW10NK80Z N-channel 800V - 0.78Ω - 9A - TO-220/FP-TO-247 Zener-protected superMESHTM MOSFET General features Type VDSS RDS(on) ID Pw STP10NK80Z 800V <0.90Ω 9A 160 W 3 2 3 1 2 STW10NK80Z 800V <0.90Ω 9A 160 w 1 TO-220 TO-220FP STP10NK80ZFP 800V <0.90Ω 9A 40 W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimize

4.14. stb10n95k5 stf10n95k5 stp10n95k5 stw10n95k5.pdf Size:1328K _st

STP10NB50
STP10NB50

STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5 N-channel 950 V, 0.65 Ω typ., 8 A Zener-protected SuperMESH™ 5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 Datasheet - production data TAB Features 3 Order codes VDS RDS(on) max ID PTOT 1 2 3 D PAK STB10N95K5 130 W 2 1 STF10N95K5 30 W TO-220FP 950 V 0.8 Ω 8 A STP10N95K5 TAB 130 W STW10N95K5 • Worldwide best FOM

4.15. stb10n60m2 std10n60m2 stp10n60m2 stu10n60m2.pdf Size:1627K _st

STP10NB50
STP10NB50

STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2 N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh II Plus™ low Qg Power MOSFETs in D²PAK, DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB TAB RDS(on) 3 Order codes VDS @ TJmax max ID 1 3 1 DPAK STB10N60M2 D 2 PAK STD10N60M2 650 V 0.600 Ω 7.5 A STP10N60M2 TAB TAB STU10N60M2 3 • Extremely low gate ch

4.16. stp10nk50z stf10nk50z.pdf Size:528K _st

STP10NB50
STP10NB50

STP10NK50Z STF10NK50Z N-CHANNEL 500V - 0.55Ω - 9A TO-220 / TO-220FP Zener-Protected SuperMESH™MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID Pw STP10NK50Z 500 V < 0.7 Ω 9 A 125 W STF10NK50Z 500 V < 0.7 Ω 9 A(*) 30 W ■ TYPICAL RDS(on) = 0.55 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100% AVALANCHE TESTED ■ GATE CHARGE MINIMIZED 3 ■ VERY LOW I

4.17. stp10nc50fp stp10nc50.pdf Size:149K _st

STP10NB50
STP10NB50

STP10NC50 STP10NC50FP ® N - CHANNEL 500V - 0.48Ω - 10A - TO-220/TO-220FP PowerMESH MOSFET PRELIMINARY DATA TYPE V R I DSS DS(on) D STP10NC50 500 V < 0.52 Ω 10 A STP10NC50FP 500 V < 0.52 Ω 10 A TYPICAL R = 0.48 Ω DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES 3 3 GATE CHARGE MINIMIZED 2 2 1 1 DESCRIPTION Using t

4.18. stf10n105k5 stp10n105k5 stw10n105k5.pdf Size:718K _st

STP10NB50
STP10NB50

STF10N105K5, STP10N105K5, STW10N105K5 N-channel 1050 V, 1 Ω typ., 6 A MDmesh™ K5 Power MOSFETs in TO-220, TO-220FP and TO-247 packages Datasheet - production data Features TAB R DS(on) Order codes V I P DS D TOT max. STF10N105K5 30 W 3 3 2 2 1 STP10N105K5 1050 V 1.3 Ω 6 A 130 W 1 TO-220 STW10N105K5 130 W TO-220FP  Industry’s lowest RDS(on) 3  In

4.19. std10nm60n stf10nm60n stp10nm60n stu10nm60n 2.pdf Size:997K _st

STP10NB50
STP10NB50

STD10NM60N, STF10NM60N STP10NM60N, STU10NM60N N-channel 600 V, 0.53 Ω, 8 A, DPAK, TO-220, TO-220FP, IPAK MDmesh™ II Power MOSFET Features VDSS RDS(on) Type ID Pw @TJmax max. 3 3 STD10NM60N 70 W 2 2 1 1 STF10NM60N 25 W TO-220 TO-220FP 650 V < 0.55 Ω 8 A STP10NM60N 70 W STU10NM60N 3 ■ 100% avalanche tested 2 3 1 1 ■ Low input capacitance and gate charge IPAK

4.20. stp10nk60zfp.pdf Size:201K _inchange_semiconductor

STP10NB50
STP10NB50

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP10NK60ZFP ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATIN

4.21. stp10nm65n.pdf Size:205K _inchange_semiconductor

STP10NB50
STP10NB50

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP10NM65N ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Load switch ·Power management ·ABSOLUTE MAXIMUM RATINGS(T =25

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