ELM33416CA Todos los transistores

 

ELM33416CA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ELM33416CA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 15 nC
   trⓘ - Tiempo de subida: 330 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.23 Ohm
   Paquete / Cubierta: SOT-23

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ELM33416CA Datasheet (PDF)

 ..1. Size:1575K  elm
elm33416ca.pdf

ELM33416CA
ELM33416CA

Single N-channel MOSFETELM33416CA-SGeneral description Features ELM33416CA-S uses advanced trench technology to Vds=100Vprovide excellent Rds(on), low gate charge and low gate Id=1.3A resistance. Rds(on)

 7.1. Size:423K  elm
elm33412ca.pdf

ELM33416CA
ELM33416CA

Single N-channel MOSFETELM33412CA-SGeneral description Features ELM33412CA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=6A resistance. Rds(on)

 7.2. Size:398K  elm
elm33414ca.pdf

ELM33416CA
ELM33416CA

Single N-channel MOSFETELM33414CA-SGeneral description Features ELM33414CA-S uses advanced trench technology Vds=60Vto provide excellent Rds(on), low gate charge and Id=300mA operation with gate voltages as low as 3.5V and internal Rds(on)

 7.3. Size:485K  elm
elm33410ca.pdf

ELM33416CA
ELM33416CA

Single N-channel MOSFETELM33410CA-SGeneral description Features ELM33410CA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=5A resistance. Rds(on)

 7.4. Size:610K  elm
elm33411ca.pdf

ELM33416CA
ELM33416CA

Single P-channel MOSFETELM33411CA-SGeneral description Features ELM33411CA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-3A resistance. Rds(on)

 7.5. Size:355K  elm
elm33415ca.pdf

ELM33416CA
ELM33416CA

Single P-channel MOSFETELM33415CA-SGeneral description Features ELM33415CA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-3.5A resistance. Rds(on)

 7.6. Size:486K  elm
elm33413ca.pdf

ELM33416CA
ELM33416CA

Single P-channel MOSFETELM33413CA-SGeneral description Features ELM33413CA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-4A resistance. Rds(on)

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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