ELM33416CA
MOSFET. Datasheet pdf. Equivalent
Type Designator: ELM33416CA
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.75
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 1.3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 15
nC
trⓘ - Rise Time: 330
nS
Cossⓘ -
Output Capacitance: 80
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.23
Ohm
Package:
SOT-23
ELM33416CA
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ELM33416CA
Datasheet (PDF)
..1. Size:1575K elm
elm33416ca.pdf 
Single N-channel MOSFETELM33416CA-SGeneral description Features ELM33416CA-S uses advanced trench technology to Vds=100Vprovide excellent Rds(on), low gate charge and low gate Id=1.3A resistance. Rds(on)
7.1. Size:423K elm
elm33412ca.pdf
Single N-channel MOSFETELM33412CA-SGeneral description Features ELM33412CA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=6A resistance. Rds(on)
7.2. Size:398K elm
elm33414ca.pdf
Single N-channel MOSFETELM33414CA-SGeneral description Features ELM33414CA-S uses advanced trench technology Vds=60Vto provide excellent Rds(on), low gate charge and Id=300mA operation with gate voltages as low as 3.5V and internal Rds(on)
7.3. Size:485K elm
elm33410ca.pdf
Single N-channel MOSFETELM33410CA-SGeneral description Features ELM33410CA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=5A resistance. Rds(on)
7.4. Size:610K elm
elm33411ca.pdf
Single P-channel MOSFETELM33411CA-SGeneral description Features ELM33411CA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-3A resistance. Rds(on)
7.5. Size:355K elm
elm33415ca.pdf
Single P-channel MOSFETELM33415CA-SGeneral description Features ELM33415CA-S uses advanced trench technology to Vds=-20Vprovide excellent Rds(on), low gate charge and low gate Id=-3.5A resistance. Rds(on)
7.6. Size:486K elm
elm33413ca.pdf
Single P-channel MOSFETELM33413CA-SGeneral description Features ELM33413CA-S uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-4A resistance. Rds(on)
Datasheet: WPB4002
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