ELM34406AA-N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ELM34406AA-N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2.5 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 7.5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 16 nC
Tiempo de subida (tr): 7.5 nS
Conductancia de drenaje-sustrato (Cd): 175 pF
Resistencia entre drenaje y fuente RDS(on): 0.028 Ohm
Paquete / Cubierta: SOP-8
Búsqueda de reemplazo de MOSFET ELM34406AA-N
ELM34406AA-N Datasheet (PDF)
elm34406aa-n.pdf
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Single N-channel MOSFETELM34406AA-NGeneral description Features ELM34406AA-N uses advanced trench technology to Vds=40Vprovide excellent Rds(on), low gate charge and low gate Id=7.5A resistance. Rds(on)
elm34402aa.pdf
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Single N-channel MOSFETELM34402AA-NGeneral description Features ELM34402AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=8A resistance. Rds(on)
elm34404aa.pdf
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Single N-channel MOSFETELM34404AA-NGeneral description Features ELM34404AA-N uses advanced trench technology to Vds=60Vprovide excellent Rds(on), low gate charge and low gate Id=5.5A resistance. Rds(on)
elm34400aa.pdf
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Single N-channel MOSFETELM34400AA-NGeneral description Features ELM34400AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=10A resistance. Rds(on)
elm34403aa-n.pdf
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Single P-channel MOSFETELM34403AA-NGeneral description Features ELM34403AA-N uses advanced trench technology to Vds=-55Vprovide excellent Rds(on), low gate charge and low gate Id=-4.5A resistance. Rds(on)
elm34409aa.pdf
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Single P-channel MOSFETELM34409AA-NGeneral description Features ELM34409AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-9A resistance. Rds(on)
elm34401aa.pdf
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Single P-channel MOSFETELM34401AA-NGeneral description Features ELM34401AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)
elm34405aa.pdf
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Single P-channel MOSFETELM34405AA-NGeneral description Features ELM34405AA-N uses advanced trench technology to Vds=-40Vprovide excellent Rds(on), low gate charge and low gate Id=-5.5A resistance. Rds(on)
elm34408aa.pdf
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Single N-channel MOSFETELM34408AA-NGeneral description Features ELM34408AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=8A resistance. Rds(on)
elm34407aa.pdf
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Single P-channel MOSFETELM34407AA-NGeneral description Features ELM34407AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C