ELM34406AA-N - описание и поиск аналогов

Single N-channel MOSFET ELM34406AA-N General description Features ELM34406AA-N uses advanced trench technology to Vds=40V provide excellent Rds(on), low gate charge and low gate Id=7.5A resistance. Rds(on)

Single N-channel MOSFET ELM34402AA-N General description Features ELM34402AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=8A resistance. Rds(on)

Single N-channel MOSFET ELM34404AA-N General description Features ELM34404AA-N uses advanced trench technology to Vds=60V provide excellent Rds(on), low gate charge and low gate Id=5.5A resistance. Rds(on)

Single N-channel MOSFET ELM34400AA-N General description Features ELM34400AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=10A resistance. Rds(on)

Single P-channel MOSFET ELM34403AA-N General description Features ELM34403AA-N uses advanced trench technology to Vds=-55V provide excellent Rds(on), low gate charge and low gate Id=-4.5A resistance. Rds(on)

Single P-channel MOSFET ELM34409AA-N General description Features ELM34409AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-9A resistance. Rds(on)

Single P-channel MOSFET ELM34401AA-N General description Features ELM34401AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)

Single P-channel MOSFET ELM34405AA-N General description Features ELM34405AA-N uses advanced trench technology to Vds=-40V provide excellent Rds(on), low gate charge and low gate Id=-5.5A resistance. Rds(on)

Single N-channel MOSFET ELM34408AA-N General description Features ELM34408AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=8A resistance. Rds(on)

Single P-channel MOSFET ELM34407AA-N General description Features ELM34407AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)