ELM34416AA Todos los transistores

 ..1. Size:322K  elm
 elm34416aa.pdf

Single N-channel MOSFET ELM34416AA-N General description Features ELM34416AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=11A resistance. Rds(on)

 7.1. Size:991K  elm
 elm34413aa-n.pdf

Single P-channel MOSFET ELM34413AA-N General description Features ELM34413AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-12A resistance. Rds(on)

 7.2. Size:613K  elm
 elm34411aa.pdf

Single P-channel MOSFET ELM34411AA-N General description Features ELM34411AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-12A resistance. Rds(on)

 7.3. Size:561K  elm
 elm34417aa.pdf

Single P-channel MOSFET ELM34417AA-N General description Features ELM34417AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-6A resistance. Rds(on)

 7.4. Size:356K  elm
 elm34414aa.pdf

Single N-channel MOSFET ELM34414AA-N General description Features ELM34414AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=15A resistance. Rds(on)

 7.5. Size:614K  elm
 elm34415aa.pdf

Single P-channel MOSFET ELM34415AA-N General description Features ELM34415AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-13A resistance. Rds(on)

 7.6. Size:439K  elm
 elm34418aa.pdf

Single N-channel MOSFET ELM34418AA-N General description Features ELM34418AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=22A resistance. Rds(on)