All MOSFET. ELM34416AA Datasheet

 

ELM34416AA Datasheet and Replacement


   Type Designator: ELM34416AA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 225 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: SOP-8
 

 ELM34416AA substitution

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ELM34416AA Datasheet (PDF)

 ..1. Size:322K  elm
 elm34416aa.pdf pdf_icon

ELM34416AA

Single N-channel MOSFETELM34416AA-NGeneral description Features ELM34416AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=11A resistance. Rds(on)

 7.1. Size:991K  elm
 elm34413aa-n.pdf pdf_icon

ELM34416AA

Single P-channel MOSFETELM34413AA-NGeneral description Features ELM34413AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-12A resistance. Rds(on)

 7.2. Size:613K  elm
 elm34411aa.pdf pdf_icon

ELM34416AA

Single P-channel MOSFETELM34411AA-NGeneral description Features ELM34411AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-12A resistance. Rds(on)

 7.3. Size:561K  elm
 elm34417aa.pdf pdf_icon

ELM34416AA

Single P-channel MOSFETELM34417AA-NGeneral description Features ELM34417AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-6A resistance. Rds(on)

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Datasheet: ELM34406AA-N , ELM34407AA , ELM34408AA , ELM34409AA , ELM34411AA , ELM34413AA-N , ELM34414AA , ELM34415AA , 7N60 , ELM34417AA , ELM34418AA , ELM34421AA , ELM34423AA , ELM34600AA , ELM34601AA , ELM34603AA , ELM34604AA .

History: BSC0501NSI | AP3R303GMT | SVG103R0NS | OSG80R140KF | UT2309 | DMN3730UFB-7 | ELM34418AA

Keywords - ELM34416AA MOSFET datasheet

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