ELM34605AA-N Todos los transistores

 ..1. Size:1322K  elm
 elm34605aa-n.pdf

Complementary MOSFET ELM34605AA-N General Description Features ELM34605AA-N uses advanced trench N-channel P-channel technology to provide excellent Rds(on) Vds=30V Vds=-30V and low gate charge. Id=7A Id=-6A Rds(on)

 7.1. Size:931K  elm
 elm34601aa.pdf

Complementary MOSFET ELM34601AA-N General Description Features ELM34601AA-N uses advanced trench N-channel P-channel technology to provide excellent Rds(on) Vds=30V Vds=-30V and low gate charge. Id=7A Id=-6A Rds(on)

 7.2. Size:973K  elm
 elm34604aa.pdf

Complementary MOSFET ELM34604AA-N General Description Features ELM34604AA-N uses advanced trench N-channel P-channel technology to provide excellent Rds(on) Vds=40V Vds=-40V and low gate charge. Id=7A Id=-5A Rds(on)

 7.3. Size:941K  elm
 elm34600aa.pdf

Complementary MOSFET ELM34600AA-N General Description Features ELM34600AA-N uses advanced trench N-channel P-channel technology to provide excellent Rds(on) Vds=30V Vds=-30V and low gate charge. Id=7A Id=-5A Rds(on)

 7.4. Size:638K  elm
 elm34608aa.pdf

Complementary MOSFET ELM34608AA-N General Description Features ELM34608AA-N uses advanced trench N-channel P-channel technology to provide excellent Rds(on) Vds=60V Vds=-60V and low gate charge. Id=4.5A Id=-3.5A Rds(on)

 7.5. Size:981K  elm
 elm34603aa.pdf

Complementary MOSFET ELM34603AA-N General Description Features ELM34603AA-N uses advanced trench N-channel P-channel technology to provide excellent Rds(on) Vds=30V Vds=-30V and low gate charge. Id=7A Id=-6A Rds(on)