ELM34605AA-N MOSFET Datasheet: NP-Ch, 30V, 7A. Full specification with pinout and replacement list

ELM34605AA-N Specs and Replacement

Type Designator: ELM34605AA-N

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.5 nS

Cossⓘ - Output Capacitance: 175 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: SOP-8

ELM34605AA-N substitution

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ELM34605AA-N datasheet

..1. Size:1322K elm
elm34605aa-n.pdf pdf_icon

Complementary MOSFET ELM34605AA-N General Description Features ELM34605AA-N uses advanced trench N-channel P-channel technology to provide excellent Rds(on) Vds=30V Vds=-30V and low gate charge. Id=7A Id=-6A Rds(on) ... See More ⇒

7.1. Size:931K elm
elm34601aa.pdf pdf_icon

Complementary MOSFET ELM34601AA-N General Description Features ELM34601AA-N uses advanced trench N-channel P-channel technology to provide excellent Rds(on) Vds=30V Vds=-30V and low gate charge. Id=7A Id=-6A Rds(on) ... See More ⇒

7.2. Size:973K elm
elm34604aa.pdf pdf_icon

Complementary MOSFET ELM34604AA-N General Description Features ELM34604AA-N uses advanced trench N-channel P-channel technology to provide excellent Rds(on) Vds=40V Vds=-40V and low gate charge. Id=7A Id=-5A Rds(on) ... See More ⇒

7.3. Size:941K elm
elm34600aa.pdf pdf_icon

Complementary MOSFET ELM34600AA-N General Description Features ELM34600AA-N uses advanced trench N-channel P-channel technology to provide excellent Rds(on) Vds=30V Vds=-30V and low gate charge. Id=7A Id=-5A Rds(on) ... See More ⇒