All MOSFET. ELM34605AA-N Datasheet

 

ELM34605AA-N Datasheet and Replacement


   Type Designator: ELM34605AA-N
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 7.5 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SOP-8
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ELM34605AA-N Datasheet (PDF)

 ..1. Size:1322K  elm
 elm34605aa-n.pdf pdf_icon

ELM34605AA-N

Complementary MOSFET ELM34605AA-NGeneral Description Features ELM34605AA-N uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=30V Vds=-30Vand low gate charge. Id=7A Id=-6A Rds(on)

 7.1. Size:931K  elm
 elm34601aa.pdf pdf_icon

ELM34605AA-N

Complementary MOSFET ELM34601AA-NGeneral Description Features ELM34601AA-N uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=30V Vds=-30Vand low gate charge. Id=7A Id=-6A Rds(on)

 7.2. Size:973K  elm
 elm34604aa.pdf pdf_icon

ELM34605AA-N

Complementary MOSFET ELM34604AA-NGeneral Description Features ELM34604AA-N uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=40V Vds=-40V and low gate charge. Id=7A Id=-5A Rds(on)

 7.3. Size:941K  elm
 elm34600aa.pdf pdf_icon

ELM34605AA-N

Complementary MOSFET ELM34600AA-NGeneral Description Features ELM34600AA-N uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=30V Vds=-30V and low gate charge. Id=7A Id=-5A Rds(on)

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History: VBNC1303 | IRFS4010PBF

Keywords - ELM34605AA-N MOSFET datasheet

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