ELM34605AA-N Datasheet and Replacement
Type Designator: ELM34605AA-N
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7.5 nS
Cossⓘ - Output Capacitance: 175 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: SOP-8
ELM34605AA-N substitution
ELM34605AA-N Datasheet (PDF)
elm34605aa-n.pdf

Complementary MOSFET ELM34605AA-NGeneral Description Features ELM34605AA-N uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=30V Vds=-30Vand low gate charge. Id=7A Id=-6A Rds(on)
elm34601aa.pdf

Complementary MOSFET ELM34601AA-NGeneral Description Features ELM34601AA-N uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=30V Vds=-30Vand low gate charge. Id=7A Id=-6A Rds(on)
elm34604aa.pdf

Complementary MOSFET ELM34604AA-NGeneral Description Features ELM34604AA-N uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=40V Vds=-40V and low gate charge. Id=7A Id=-5A Rds(on)
elm34600aa.pdf

Complementary MOSFET ELM34600AA-NGeneral Description Features ELM34600AA-N uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=30V Vds=-30V and low gate charge. Id=7A Id=-5A Rds(on)
Datasheet: ELM34417AA , ELM34418AA , ELM34421AA , ELM34423AA , ELM34600AA , ELM34601AA , ELM34603AA , ELM34604AA , AO3401 , ELM34608AA , ELM34801AA , ELM34802AA-N , ELM34803AA-N , ELM34804AA , ELM34808AA , ELM34810AA , ELM34812AA .
History: FQB3N30TM | IRF7483M | SM6F24NSFP | SSF3624 | MTP4N08 | VBM1203M
Keywords - ELM34605AA-N MOSFET datasheet
ELM34605AA-N cross reference
ELM34605AA-N equivalent finder
ELM34605AA-N lookup
ELM34605AA-N substitution
ELM34605AA-N replacement
History: FQB3N30TM | IRF7483M | SM6F24NSFP | SSF3624 | MTP4N08 | VBM1203M



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