FJ4B0110 Todos los transistores

 

FJ4B0110 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FJ4B0110
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.36 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 2.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 85 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.074 Ohm
   Paquete / Cubierta: XLGA004
 

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FJ4B0110 Datasheet (PDF)

 ..1. Size:2759K  panasonic
fj4b0110.pdf pdf_icon

FJ4B0110

Doc No. TT4-EA-14958Revision. 1Product StandardsMOS FETFJ4B01100LFJ4B01100LSingle P-channel MOS FETUnit: mmFor Load switching circuits0.804 3TOP Features Low Drain-source ON resistance:Rds(on) typ. = 68 m(VGS = -2.5 V)1 2 CSP (Chip Size Package) RoHS compliant (EU RoHS / MSL:Level 1 compliant)0.20 Marking Symbol: 1DBOTTOM Packaging

 7.1. Size:2778K  panasonic
fj4b0111.pdf pdf_icon

FJ4B0110

Doc No. TT4-EA-14953Revision. 1Product StandardsMOS FETFJ4B01110LFJ4B01110LSingle P-channel MOS FETUnit: mmFor Load switching circuits0.6043TOP Features Drain-source ON resistance:Rds(on) typ. = 141 m( VGS = -2.5 V )1 2 CSP (Chip Size Package) RoHS compliant (EU RoHS / MSL:Level 1 compliant)0.15 Marking Symbol: 1EBOTTOM Packaging

 7.2. Size:2749K  panasonic
fj4b0112.pdf pdf_icon

FJ4B0110

Doc No. TT4-EA-14960Revision. 1Product StandardsMOS FETFJ4B01120LFJ4B01120LSingle P-channel MOS FETUnit: mmFor Load switching circuits1.04 3TOP Features Low Drain-source ON resistance:Rds(on) typ. = 40 mVGS = -2.5 V)1 2 CSP (Chip Size Package) RoHS compliant (EU RoHS / MSL:Level 1 compliant)0.25 Marking Symbol: 1FBOTTOM Packaging

 8.1. Size:714K  panasonic
fj4b0124.pdf pdf_icon

FJ4B0110

Doc No. TT4-EA-15007Revision. 1Product StandardsMOS FETFJ4B01240LFJ4B01240LSingle P-channel MOS FETUnit: mmFor Load switching / Battery Management circuitsTOP Features Low Drain-source ON resistance:Rds(on) typ. = 21 mVGS = -3.2 V) CSP (Chip Size Package) RoHS compliant (EU RoHS / MSL:Level 1 compliant) Marking Symbol: 1JBOTTOM Packaging

Otros transistores... FG6K4206 , FIR18N20G , FIR210N06G , FIR75N06G , FIR75N075G , FJ330301 , FJ3303010L , FJ350301 , AO3400 , FJ4B0111 , FJ4B0112 , FJ4B0124 , FJ6K0101 , FJ6K01010L , FK330301 , FK3303010L , FK330307 .

History: OSG60R099HSZF | PMCXB900UE | STU70N2LH5 | APM2309AC | IXTH72N20 | CHM5506JGP | RSS090P03FU6TB

 

 
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