FK8V03040L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FK8V03040L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 33 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6 nS
Cossⓘ - Capacitancia de salida: 170 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
Encapsulados: SC-115
Búsqueda de reemplazo de FK8V03040L MOSFET
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FK8V03040L datasheet
fk8v0304 fk8v03040l.pdf
Doc No. TT4-EA-13169 Revision. 3 Product Standards MOS FET FK8V03040L FK8V03040L Silicon N-channel MOSFET Unit mm For lithium-ion secondary battery protecion circuit 2.9 0.3 0.16 For DC-DC Converter 8 7 6 5 Features Low drain-source On-state Resistance RDS(on) typ = 11 m (VGS = 4.5 V) High-speed switching Qg = 7.2 nC Halogen-free / RoHS compliant 1 2 3
fk8v0302.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). FK8V0302 Silicon N-channel MOS FET For lithium-ion secondary battery protection circuits Overview Package FK8V0302 is N-channel single type small signal MOS FET adopted small Code size surface mounting package. WMini8-F1 Package dimension clicks here. Click! Features Low drain-source ON resistance RD
fk8v03050l.pdf
Doc No. TT4-EA-13029 Revision. 3 Product Standards MOS FET FK8V03050L FK8V03050L Silicon N-channel MOSFET Unit mm For lithium-ion secondary battery protecion circuit 2.9 For DC-DC Converter 0.3 0.16 8 7 6 5 Features Low drain-source On-state Resistance RDS(on) typ = 16 m (VGS = 4.5 V) High-speed switching Qg = 5.1 nC Halogen-free / RoHS compliant 1 2 3
fk8v0306.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). FK8V0306 Silicon N-channel MOS FET For DC-DC converter circuits Overview Package N-channel single type, MOS FET in a compact surface mount type package. Code WMini8-F1 Features Package dimension clicks here. Click! Low drain-source ON resistance RDS(on) typ. = 15 mW (VGS = 10 V) High-speed swi
Otros transistores... FK4B0111 , FK4B0112 , FK6K0201 , FK6K02010L , FK6K0612 , FK8V0302 , FK8V0303 , FK8V0304 , SI2302 , FK8V03050L , FK8V0306 , FK8V0606 , FK8V06120L , FKG1020 , FKH0660 , FKI06051 , FKI06075 .
History: KQS4901
History: KQS4901
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