FK8V03040L
MOSFET. Datasheet pdf. Equivalent
Type Designator: FK8V03040L
Marking Code: 3D
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 33
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 7.2
nC
trⓘ - Rise Time: 6
nS
Cossⓘ -
Output Capacitance: 170
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01
Ohm
Package: SC-115
FK8V03040L
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FK8V03040L
Datasheet (PDF)
..1. Size:397K panasonic
fk8v0304 fk8v03040l.pdf
Doc No. TT4-EA-13169Revision. 3Product StandardsMOS FETFK8V03040LFK8V03040LSilicon N-channel MOSFETUnit: mm For lithium-ion secondary battery protecion circuit2.90.3 0.16For DC-DC Converter8 7 6 5 Features Low drain-source On-state Resistance RDS(on) typ = 11 m (VGS = 4.5 V) High-speed switching : Qg = 7.2 nC Halogen-free / RoHS compliant1 2 3
7.1. Size:264K panasonic
fk8v0302.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).FK8V0302Silicon N-channel MOS FETFor lithium-ion secondary battery protection circuits Overview PackageFK8V0302 is N-channel single type small signal MOS FET adopted small Codesize surface mounting package. WMini8-F1Package dimension clicks here. Click! Features Low drain-source ON resistance: RD
7.2. Size:389K panasonic
fk8v03050l.pdf
Doc No. TT4-EA-13029Revision. 3Product StandardsMOS FETFK8V03050LFK8V03050LSilicon N-channel MOSFETUnit: mm For lithium-ion secondary battery protecion circuit2.9For DC-DC Converter0.3 0.168 7 6 5 Features Low drain-source On-state Resistance RDS(on) typ = 16 m (VGS = 4.5 V) High-speed switching : Qg = 5.1 nC Halogen-free / RoHS compliant1 2 3
7.3. Size:404K panasonic
fk8v0306.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).FK8V0306Silicon N-channel MOS FETFor DC-DC converter circuits Overview Package N-channel single type, MOS FET in a compact surface mount type package. Code WMini8-F1 FeaturesPackage dimension clicks here. Click! Low drain-source ON resistance: RDS(on) typ. = 15 mW (VGS = 10 V) High-speed swi
7.4. Size:275K panasonic
fk8v0303.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).FK8V0303Silicon N-channel MOS FETFor DC-DC Converter circuits Overview PackageFK8V0303 is N-channel single type small signal MOS FET adopted small Codesize surface mounting package. WMini8-F1Package dimension clicks here. Click! Features Low drain-source ON resistance: RDS(on) typ. = 8 mW (VGS =
Datasheet: FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, GMM3x120-0075X2-SMD
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, STP80NF70
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
, FDMS3610S
, GWM100-0085X1-SMD
, FDMS3606S
, GWM100-01X1-SL
.