NTA4001NT1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTA4001NT1
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 0.238 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 10 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
Paquete / Cubierta: SOT-416
Búsqueda de reemplazo de NTA4001NT1 MOSFET
NTA4001NT1 Datasheet (PDF)
nta4001nt1 nva4001n.pdf

NTA4001N, NVA4001NSmall Signal MOSFET20 V, 238 mA, Single, N-Channel, GateESD Protection, SC-75Features http://onsemi.com Low Gate Charge for Fast SwitchingV(BR)DSS RDS(on) ID MAX Small 1.6 x 1.6 mm FootprintTyp @ VGS (Note 1) ESD Protected Gate1.5 W @ 4.5 V20 V 238 mA AEC-Q101 Qualified and PPAP Capable - NVA4001N2.2 W @ 2.5 V These Devices are Pb-Fre
lnta4001nt1g.pdf

LESHAN RADIO COMPANY, LTD.Small Signal MOSFETLNTA4001NT1G20 V, 238 mA, Single, N-Channel, GateESD Protection3Features Low Gate Charge for Fast Switching1 Small 1.6 x 1.6 mm Footprint2 ESD Protected GateSC-89 Pb-Free Package is AvailableApplications Power Management Load Switch Level ShiftV(BR)DSS RDS(on) ID MAXTyp @ VGS (Note 1) Portabl
lnta4001nt1g s-lnta4001nt1g.pdf

LESHAN RADIO COMPANY, LTD.LNTA4001NT1GSmall Signal MOSFETS-LNTA4001NT1G20 V, 238 mA, Single, N-Channel, GateESD ProtectionFeatures Low Gate Charge for Fast Switching Small 1.6 x 1.6 mm Footprint ESD Protected Gate Pb-Free Package is AvailableSC-89 ESD Protected:2000VESD Protected:1500V S- Prefix for Automotive and Other Applications Requiring ESD
nta4001n nva4001n.pdf

NTA4001N, NVA4001NSmall Signal MOSFET20 V, 238 mA, Single, N-Channel, GateESD Protection, SC-75Features http://onsemi.com Low Gate Charge for Fast SwitchingV(BR)DSS RDS(on) ID MAX Small 1.6 x 1.6 mm FootprintTyp @ VGS (Note 1) ESD Protected Gate1.5 W @ 4.5 V20 V 238 mA AEC-Q101 Qualified and PPAP Capable - NVA4001N2.2 W @ 2.5 V These Devices are Pb-Fre
Otros transistores... N0300P , N0301N , N0301P , N0302P , N0400P , N0412N , N0413N , NT4N03 , AO4407 , NTA4151PT1 , NTA4153NT1 , NTA7002NT1 , NTB125N02R , NTB13N10 , NTB18N06 , NTB18N06G , NTB18N06L .



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