NTA4001NT1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTA4001NT1
Código: TF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 0.238 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.5 Vtrⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 10 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
Paquete / Cubierta: SOT-416
Búsqueda de reemplazo de MOSFET NTA4001NT1
NTA4001NT1 Datasheet (PDF)
nta4001nt1 nva4001n.pdf
NTA4001N, NVA4001NSmall Signal MOSFET20 V, 238 mA, Single, N-Channel, GateESD Protection, SC-75Features http://onsemi.com Low Gate Charge for Fast SwitchingV(BR)DSS RDS(on) ID MAX Small 1.6 x 1.6 mm FootprintTyp @ VGS (Note 1) ESD Protected Gate1.5 W @ 4.5 V20 V 238 mA AEC-Q101 Qualified and PPAP Capable - NVA4001N2.2 W @ 2.5 V These Devices are Pb-Fre
lnta4001nt1g.pdf
LESHAN RADIO COMPANY, LTD.Small Signal MOSFETLNTA4001NT1G20 V, 238 mA, Single, N-Channel, GateESD Protection3Features Low Gate Charge for Fast Switching1 Small 1.6 x 1.6 mm Footprint2 ESD Protected GateSC-89 Pb-Free Package is AvailableApplications Power Management Load Switch Level ShiftV(BR)DSS RDS(on) ID MAXTyp @ VGS (Note 1) Portabl
lnta4001nt1g s-lnta4001nt1g.pdf
LESHAN RADIO COMPANY, LTD.LNTA4001NT1GSmall Signal MOSFETS-LNTA4001NT1G20 V, 238 mA, Single, N-Channel, GateESD ProtectionFeatures Low Gate Charge for Fast Switching Small 1.6 x 1.6 mm Footprint ESD Protected Gate Pb-Free Package is AvailableSC-89 ESD Protected:2000VESD Protected:1500V S- Prefix for Automotive and Other Applications Requiring ESD
nta4001n nva4001n.pdf
NTA4001N, NVA4001NSmall Signal MOSFET20 V, 238 mA, Single, N-Channel, GateESD Protection, SC-75Features http://onsemi.com Low Gate Charge for Fast SwitchingV(BR)DSS RDS(on) ID MAX Small 1.6 x 1.6 mm FootprintTyp @ VGS (Note 1) ESD Protected Gate1.5 W @ 4.5 V20 V 238 mA AEC-Q101 Qualified and PPAP Capable - NVA4001N2.2 W @ 2.5 V These Devices are Pb-Fre
nta4001n.pdf
NTA4001NSmall Signal MOSFET20 V, 238 mA, Single, N-Channel, GateESD Protection, SC-75Features http://onsemi.com Low Gate Charge for Fast SwitchingV(BR)DSS RDS(on) ID MAX Small 1.6 x 1.6 mm FootprintTyp @ VGS (Note 1) ESD Protected Gate1.5 W @ 4.5 V20 V 238 mA Pb-Free Package is Available2.2 W @ 2.5 VApplications3 Power Management Load Switch L
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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