NTA4001NT1 Specs and Replacement

Type Designator: NTA4001NT1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 0.238 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 10 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: SOT-416

NTA4001NT1 substitution

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NTA4001NT1 datasheet

 ..1. Size:128K  onsemi
 nta4001nt1 nva4001n.pdf pdf_icon

NTA4001NT1

NTA4001N, NVA4001N Small Signal MOSFET 20 V, 238 mA, Single, N-Channel, Gate ESD Protection, SC-75 Features http //onsemi.com Low Gate Charge for Fast Switching V(BR)DSS RDS(on) ID MAX Small 1.6 x 1.6 mm Footprint Typ @ VGS (Note 1) ESD Protected Gate 1.5 W @ 4.5 V 20 V 238 mA AEC-Q101 Qualified and PPAP Capable - NVA4001N 2.2 W @ 2.5 V These Devices are Pb-Fre... See More ⇒

 0.1. Size:146K  lrc
 lnta4001nt1g.pdf pdf_icon

NTA4001NT1

LESHAN RADIO COMPANY, LTD. Small Signal MOSFET LNTA4001NT1G 20 V, 238 mA, Single, N-Channel, Gate ESD Protection 3 Features Low Gate Charge for Fast Switching 1 Small 1.6 x 1.6 mm Footprint 2 ESD Protected Gate SC-89 Pb-Free Package is Available Applications Power Management Load Switch Level Shift V(BR)DSS RDS(on) ID MAX Typ @ VGS (Note 1) Portabl... See More ⇒

 0.2. Size:212K  lrc
 lnta4001nt1g s-lnta4001nt1g.pdf pdf_icon

NTA4001NT1

LESHAN RADIO COMPANY, LTD. LNTA4001NT1G Small Signal MOSFET S-LNTA4001NT1G 20 V, 238 mA, Single, N-Channel, Gate ESD Protection Features Low Gate Charge for Fast Switching Small 1.6 x 1.6 mm Footprint ESD Protected Gate Pb-Free Package is Available SC-89 ESD Protected 2000V ESD Protected 1500V S- Prefix for Automotive and Other Applications Requiring ESD ... See More ⇒

 6.1. Size:132K  onsemi
 nta4001n nva4001n.pdf pdf_icon

NTA4001NT1

NTA4001N, NVA4001N Small Signal MOSFET 20 V, 238 mA, Single, N-Channel, Gate ESD Protection, SC-75 Features http //onsemi.com Low Gate Charge for Fast Switching V(BR)DSS RDS(on) ID MAX Small 1.6 x 1.6 mm Footprint Typ @ VGS (Note 1) ESD Protected Gate 1.5 W @ 4.5 V 20 V 238 mA AEC-Q101 Qualified and PPAP Capable - NVA4001N 2.2 W @ 2.5 V These Devices are Pb-Fre... See More ⇒

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Detailed specifications: N0300P, N0301N, N0301P, N0302P, N0400P, N0412N, N0413N, NT4N03, IRF530, NTA4151PT1, NTA4153NT1, NTA7002NT1, NTB125N02R, NTB13N10, NTB18N06, NTB18N06G, NTB18N06L

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