NTB25P06G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTB25P06G
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 120 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
|Id|ⓘ - Corriente continua de drenaje: 27.5 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 72 nS
Cossⓘ - Capacitancia de salida: 345 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm
Paquete / Cubierta: D2PAK
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NTB25P06G Datasheet (PDF)
ntb25p06g nvb25p06.pdf

NTB25P06, NVB25P06Power MOSFET-60 V, -27.5 A, P-Channel D2PAKDesigned for low voltage, high speed switching applications and towithstand high energy in the avalanche and commutation modes.Featureshttp://onsemi.com AEC Q101 Qualified - NVB25P06 These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) TYP ID MAXTypical Applications-60 V 65 mW @ -10 V -27.5 A
ntb25p06-d.pdf

NTB25P06Power MOSFET-60 V, -27.5 A, P-Channel D2PAKDesigned for low voltage, high speed switching applications and towithstand high energy in the avalanche and commutation modes.Featureshttp://onsemi.com Pb-Free Packages are AvailableV(BR)DSS RDS(on) TYP ID MAXTypical Applications PWM Motor Controls-60 V 65 mW @ -10 V -27.5 A Power Supplies ConvertersP-Ch
ntb25p06 nvb25p06.pdf

NTB25P06, NVB25P06Power MOSFET-60 V, -27.5 A, P-Channel D2PAKDesigned for low voltage, high speed switching applications and towithstand high energy in the avalanche and commutation modes.Featureshttp://onsemi.com AEC Q101 Qualified - NVB25P06 These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) TYP ID MAXTypical Applications-60 V 65 mW @ -10 V -27.5 A
ntb25p06t4g.pdf

NTB25P06T4Gwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.048at VGS = - 10 V- 35- 60 60 100 % Rg and UIS Tested0.060at VGS = - 4.5 V - 30 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Power Switch Lo
Otros transistores... NTA7002NT1 , NTB125N02R , NTB13N10 , NTB18N06 , NTB18N06G , NTB18N06L , NTB23N03R , NTB23N03RG , P0903BDG , NTB27N06LT4 , NTB30N06G , NTB30N06L , NTB30N20 , NTB35N15G , NTB4302 , NTB45N06G , NTB45N06LG .
History: AFN1932 | GP2M007A065XG | AP4501AGEM-HF | VP3203N3 | SPI21N50C3 | DSKTJ04 | AP6N1R7CDT
History: AFN1932 | GP2M007A065XG | AP4501AGEM-HF | VP3203N3 | SPI21N50C3 | DSKTJ04 | AP6N1R7CDT



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