NTB75N03-006 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NTB75N03-006
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 57 nC
   trⓘ - Tiempo de subida: 130 nS
   Cossⓘ - Capacitancia de salida: 1160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm
   Paquete / Cubierta: D2PAK

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NTB75N03-006 Datasheet (PDF)

..1. Size:74K onsemi
ntb75n03-006 ntp75n03-06 ntb75n03-06 ntp75n03-6g.pdf

NTP75N03-06,NTB75N03-06Power MOSFET75 Amps, 30 VoltsN-Channel TO-220 and D2PAKhttp://onsemi.comThis 20 VGS gate drive vertical Power MOSFET is a generalpurpose part that provides the best of design available today in a lowV(BR)DSS RDS(on) TYP ID MAXcost power package. This power MOSFET is designed to withstandhigh energy in the avalanche and commutation modes. The30

6.1. Size:91K onsemi
ntb75n03r ntb75n03r ntp75n03r ntp75n03r.pdf

NTB75N03R, NTP75N03RPower MOSFET75 Amps, 25 VoltsN-Channel D2PAK, TO-220Featureshttp://onsemi.com Planar HD3e Process for Fast Switching Performance75 AMPERES Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss25 VOLTS Low Gate ChargeRDS(on) = 5.6 mW (Typ) Pb-Free Packages are Available4MAXIMUM RATINGS (TJ = 25C Unless otherwis

6.2. Size:72K onsemi
ntb75n03l09t4 ntp75n03l09 ntp75n03l09 ntb75n03l09.pdf

NTP75N03L09,NTB75N03L09Power MOSFET75 Amps, 30 VoltsN-Channel TO-220 and D2PAKhttp://onsemi.comThis Logic Level Vertical Power MOSFET is a general purpose part75 AMPERES, 30 VOLTSthat provides the best of design available today in a low cost powerpackage. Avalanche energy issues make this part an ideal design in.RDS(on) = 8 mWThe drain-to-source diode has a ideal fas

7.1. Size:79K onsemi
ntb75n06g ntp75n06 ntp75n06 ntb75n06.pdf

NTP75N06, NTB75N06Power MOSFET75 Amps, 60 Volts, N-ChannelTO-220 and D2PAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.75 AMPERES, 60 VOLTSFeaturesRDS(on) = 9.5 mW Pb-Free Packages are AvailableN-ChannelDTypical Applications Power Supplies Converters

7.2. Size:79K onsemi
ntb75n06l ntp75n06l ntp75n06l ntb75n06l.pdf

NTP75N06L, NTB75N06LPower MOSFET75 Amps, 60 Volts, LogicLevelN-Channel TO-220 and D2PAKhttp://onsemi.comDesigned for low voltage, high speed switching applications in75 AMPERES, 60 VOLTSpower supplies, converters and power motor controls and bridgecircuits.RDS(on) = 11 mWFeaturesN-Channel Pb-Free Packages are Available DTypical Applications Power SuppliesG

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