Справочник MOSFET. NTB75N03-006

 

NTB75N03-006 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NTB75N03-006
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 75 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 57 nC
   trⓘ - Время нарастания: 130 ns
   Cossⓘ - Выходная емкость: 1160 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0065 Ohm
   Тип корпуса: D2PAK

 Аналог (замена) для NTB75N03-006

 

 

NTB75N03-006 Datasheet (PDF)

 ..1. Size:74K  onsemi
ntb75n03-006 ntp75n03-06 ntb75n03-06 ntp75n03-6g.pdf

NTB75N03-006 NTB75N03-006

NTP75N03-06,NTB75N03-06Power MOSFET75 Amps, 30 VoltsN-Channel TO-220 and D2PAKhttp://onsemi.comThis 20 VGS gate drive vertical Power MOSFET is a generalpurpose part that provides the best of design available today in a lowV(BR)DSS RDS(on) TYP ID MAXcost power package. This power MOSFET is designed to withstandhigh energy in the avalanche and commutation modes. The30

 6.1. Size:91K  onsemi
ntb75n03r ntb75n03r ntp75n03r ntp75n03r.pdf

NTB75N03-006 NTB75N03-006

NTB75N03R, NTP75N03RPower MOSFET75 Amps, 25 VoltsN-Channel D2PAK, TO-220Featureshttp://onsemi.com Planar HD3e Process for Fast Switching Performance75 AMPERES Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss25 VOLTS Low Gate ChargeRDS(on) = 5.6 mW (Typ) Pb-Free Packages are Available4MAXIMUM RATINGS (TJ = 25C Unless otherwis

 6.2. Size:72K  onsemi
ntb75n03l09t4 ntp75n03l09 ntp75n03l09 ntb75n03l09.pdf

NTB75N03-006 NTB75N03-006

NTP75N03L09,NTB75N03L09Power MOSFET75 Amps, 30 VoltsN-Channel TO-220 and D2PAKhttp://onsemi.comThis Logic Level Vertical Power MOSFET is a general purpose part75 AMPERES, 30 VOLTSthat provides the best of design available today in a low cost powerpackage. Avalanche energy issues make this part an ideal design in.RDS(on) = 8 mWThe drain-to-source diode has a ideal fas

 7.1. Size:79K  onsemi
ntb75n06g ntp75n06 ntp75n06 ntb75n06.pdf

NTB75N03-006 NTB75N03-006

NTP75N06, NTB75N06Power MOSFET75 Amps, 60 Volts, N-ChannelTO-220 and D2PAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.75 AMPERES, 60 VOLTSFeaturesRDS(on) = 9.5 mW Pb-Free Packages are AvailableN-ChannelDTypical Applications Power Supplies Converters

 7.2. Size:79K  onsemi
ntb75n06l ntp75n06l ntp75n06l ntb75n06l.pdf

NTB75N03-006 NTB75N03-006

NTP75N06L, NTB75N06LPower MOSFET75 Amps, 60 Volts, LogicLevelN-Channel TO-220 and D2PAKhttp://onsemi.comDesigned for low voltage, high speed switching applications in75 AMPERES, 60 VOLTSpower supplies, converters and power motor controls and bridgecircuits.RDS(on) = 11 mWFeaturesN-Channel Pb-Free Packages are Available DTypical Applications Power SuppliesG

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