NTB75N06G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTB75N06G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 214 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 112 nS
Cossⓘ - Capacitancia de salida: 1020 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0095 Ohm
Paquete / Cubierta: D2PAK
Búsqueda de reemplazo de MOSFET NTB75N06G
NTB75N06G Datasheet (PDF)
ntb75n06g ntp75n06 ntp75n06 ntb75n06.pdf
NTP75N06, NTB75N06Power MOSFET75 Amps, 60 Volts, N-ChannelTO-220 and D2PAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.75 AMPERES, 60 VOLTSFeaturesRDS(on) = 9.5 mW Pb-Free Packages are AvailableN-ChannelDTypical Applications Power Supplies Converters
ntb75n06l ntp75n06l ntp75n06l ntb75n06l.pdf
NTP75N06L, NTB75N06LPower MOSFET75 Amps, 60 Volts, LogicLevelN-Channel TO-220 and D2PAKhttp://onsemi.comDesigned for low voltage, high speed switching applications in75 AMPERES, 60 VOLTSpower supplies, converters and power motor controls and bridgecircuits.RDS(on) = 11 mWFeaturesN-Channel Pb-Free Packages are Available DTypical Applications Power SuppliesG
ntb75n03-006 ntp75n03-06 ntb75n03-06 ntp75n03-6g.pdf
NTP75N03-06,NTB75N03-06Power MOSFET75 Amps, 30 VoltsN-Channel TO-220 and D2PAKhttp://onsemi.comThis 20 VGS gate drive vertical Power MOSFET is a generalpurpose part that provides the best of design available today in a lowV(BR)DSS RDS(on) TYP ID MAXcost power package. This power MOSFET is designed to withstandhigh energy in the avalanche and commutation modes. The30
ntb75n03r ntb75n03r ntp75n03r ntp75n03r.pdf
NTB75N03R, NTP75N03RPower MOSFET75 Amps, 25 VoltsN-Channel D2PAK, TO-220Featureshttp://onsemi.com Planar HD3e Process for Fast Switching Performance75 AMPERES Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss25 VOLTS Low Gate ChargeRDS(on) = 5.6 mW (Typ) Pb-Free Packages are Available4MAXIMUM RATINGS (TJ = 25C Unless otherwis
ntb75n03l09t4 ntp75n03l09 ntp75n03l09 ntb75n03l09.pdf
NTP75N03L09,NTB75N03L09Power MOSFET75 Amps, 30 VoltsN-Channel TO-220 and D2PAKhttp://onsemi.comThis Logic Level Vertical Power MOSFET is a general purpose part75 AMPERES, 30 VOLTSthat provides the best of design available today in a low cost powerpackage. Avalanche energy issues make this part an ideal design in.RDS(on) = 8 mWThe drain-to-source diode has a ideal fas
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: HM2300DR
History: HM2300DR
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918