NTB75N06G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTB75N06G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 214 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 112 nS
Cossⓘ - Capacitancia de salida: 1020 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0095 Ohm
Paquete / Cubierta: D2PAK
Búsqueda de reemplazo de NTB75N06G MOSFET
NTB75N06G datasheet
ntb75n06g ntp75n06 ntp75n06 ntb75n06.pdf
NTP75N06, NTB75N06 Power MOSFET 75 Amps, 60 Volts, N-Channel TO-220 and D2PAK Designed for low voltage, high speed switching applications in http //onsemi.com power supplies, converters and power motor controls and bridge circuits. 75 AMPERES, 60 VOLTS Features RDS(on) = 9.5 mW Pb-Free Packages are Available N-Channel D Typical Applications Power Supplies Converters
ntb75n06l ntp75n06l ntp75n06l ntb75n06l.pdf
NTP75N06L, NTB75N06L Power MOSFET 75 Amps, 60 Volts, Logic Level N-Channel TO-220 and D2PAK http //onsemi.com Designed for low voltage, high speed switching applications in 75 AMPERES, 60 VOLTS power supplies, converters and power motor controls and bridge circuits. RDS(on) = 11 mW Features N-Channel Pb-Free Packages are Available D Typical Applications Power Supplies G
ntb75n03-006 ntp75n03-06 ntb75n03-06 ntp75n03-6g.pdf
NTP75N03-06, NTB75N03-06 Power MOSFET 75 Amps, 30 Volts N-Channel TO-220 and D2PAK http //onsemi.com This 20 VGS gate drive vertical Power MOSFET is a general purpose part that provides the best of design available today in a low V(BR)DSS RDS(on) TYP ID MAX cost power package. This power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The 30
ntb75n03r ntb75n03r ntp75n03r ntp75n03r.pdf
NTB75N03R, NTP75N03R Power MOSFET 75 Amps, 25 Volts N-Channel D2PAK, TO-220 Features http //onsemi.com Planar HD3e Process for Fast Switching Performance 75 AMPERES Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss 25 VOLTS Low Gate Charge RDS(on) = 5.6 mW (Typ) Pb-Free Packages are Available 4 MAXIMUM RATINGS (TJ = 25 C Unless otherwis
Otros transistores... NTB6411ANG , NTB6412ANG , NTB6413ANG , NTB65N02R , NTB65N02RT4 , NTB75N03-006 , NTB75N03L09T4 , NTB75N03R , K2611 , NTB75N06L , NTB85N03 , NTB90N02 , NTBV45N06 , NTBV45N06L , NTD110N02RG , NTD12N10G , NTD12N10T4 .
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