NTB75N06G Specs and Replacement
Type Designator: NTB75N06G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 112 nS
Cossⓘ - Output Capacitance: 1020 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
Package: D2PAK
NTB75N06G substitution
- MOSFET ⓘ Cross-Reference Search
NTB75N06G datasheet
ntb75n06g ntp75n06 ntp75n06 ntb75n06.pdf
NTP75N06, NTB75N06 Power MOSFET 75 Amps, 60 Volts, N-Channel TO-220 and D2PAK Designed for low voltage, high speed switching applications in http //onsemi.com power supplies, converters and power motor controls and bridge circuits. 75 AMPERES, 60 VOLTS Features RDS(on) = 9.5 mW Pb-Free Packages are Available N-Channel D Typical Applications Power Supplies Converters ... See More ⇒
ntb75n06l ntp75n06l ntp75n06l ntb75n06l.pdf
NTP75N06L, NTB75N06L Power MOSFET 75 Amps, 60 Volts, Logic Level N-Channel TO-220 and D2PAK http //onsemi.com Designed for low voltage, high speed switching applications in 75 AMPERES, 60 VOLTS power supplies, converters and power motor controls and bridge circuits. RDS(on) = 11 mW Features N-Channel Pb-Free Packages are Available D Typical Applications Power Supplies G ... See More ⇒
ntb75n03-006 ntp75n03-06 ntb75n03-06 ntp75n03-6g.pdf
NTP75N03-06, NTB75N03-06 Power MOSFET 75 Amps, 30 Volts N-Channel TO-220 and D2PAK http //onsemi.com This 20 VGS gate drive vertical Power MOSFET is a general purpose part that provides the best of design available today in a low V(BR)DSS RDS(on) TYP ID MAX cost power package. This power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The 30 ... See More ⇒
ntb75n03r ntb75n03r ntp75n03r ntp75n03r.pdf
NTB75N03R, NTP75N03R Power MOSFET 75 Amps, 25 Volts N-Channel D2PAK, TO-220 Features http //onsemi.com Planar HD3e Process for Fast Switching Performance 75 AMPERES Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss 25 VOLTS Low Gate Charge RDS(on) = 5.6 mW (Typ) Pb-Free Packages are Available 4 MAXIMUM RATINGS (TJ = 25 C Unless otherwis... See More ⇒
Detailed specifications: NTB6411ANG, NTB6412ANG, NTB6413ANG, NTB65N02R, NTB65N02RT4, NTB75N03-006, NTB75N03L09T4, NTB75N03R, K2611, NTB75N06L, NTB85N03, NTB90N02, NTBV45N06, NTBV45N06L, NTD110N02RG, NTD12N10G, NTD12N10T4
Keywords - NTB75N06G MOSFET specs
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