NTD18N06 Todos los transistores

 ..1. Size:162K  onsemi
 ntd18n06 ntd18n06t4g ntd18n06 ntd18n06g.pdf

NTD18N06 Power MOSFET 18 Amps, 60 Volts N-Channel DPAK Designed for low voltage, high speed switching applications in http //onsemi.com power supplies, converters and power motor controls and bridge circuits. V(BR)DSS RDS(on) TYP ID MAX Features 60 V 51 mW 18 A Pb-Free Packages are Available N-Channel Typical Applications D Power Supplies Converters Power Motor

 0.1. Size:156K  onsemi
 ntd18n06lg ntdv18n06lt4g.pdf

NTD18N06L, NTDV18N06L Power MOSFET 18 A, 60 V, Logic Level N-Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http //onsemi.com Features V(BR)DSS RDS(on) TYP ID MAX AEC Q101 Qualified - NTDV18N06L 18 A These Devices are Pb-Free and are RoHS Compliant 60 V 54 mW@5.0 V (Note 1)

 0.2. Size:86K  onsemi
 ntd18n06l ntdv18n06l.pdf

NTD18N06L, NTDV18N06L Power MOSFET 18 A, 60 V, Logic Level N-Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. www.onsemi.com Features V(BR)DSS RDS(on) TYP ID MAX AEC Q101 Qualified - NTDV18N06L 18 A These Devices are Pb-Free and are RoHS Compliant 60 V 54 mW@5.0 V (Note 1) T

 0.3. Size:121K  onsemi
 ntd18n06l.pdf

 0.4. Size:271K  inchange semiconductor
 ntd18n06l.pdf

isc N-Channel MOSFET Transistor NTD18N06L FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 65m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno