NTD18N06 Todos los transistores

 

NTD18N06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTD18N06
   Código: 18N06
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 55 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 18 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 15.3 nC
   Tiempo de subida (tr): 23 nS
   Conductancia de drenaje-sustrato (Cd): 162 pF
   Resistencia entre drenaje y fuente RDS(on): 0.06 Ohm
   Paquete / Cubierta: DPAK

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NTD18N06 Datasheet (PDF)

 ..1. Size:162K  onsemi
ntd18n06 ntd18n06t4g ntd18n06 ntd18n06g.pdf

NTD18N06
NTD18N06

NTD18N06Power MOSFET18 Amps, 60 VoltsN-Channel DPAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.V(BR)DSS RDS(on) TYP ID MAXFeatures60 V 51 mW 18 A Pb-Free Packages are AvailableN-ChannelTypical ApplicationsD Power Supplies Converters Power Motor

 0.1. Size:156K  onsemi
ntd18n06lg ntdv18n06lt4g.pdf

NTD18N06
NTD18N06

NTD18N06L, NTDV18N06LPower MOSFET18 A, 60 V, Logic Level N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits.http://onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID MAX AEC Q101 Qualified - NTDV18N06L18 A These Devices are Pb-Free and are RoHS Compliant60 V 54 mW@5.0 V(Note 1)

 0.2. Size:86K  onsemi
ntd18n06l ntdv18n06l.pdf

NTD18N06
NTD18N06

NTD18N06L, NTDV18N06LPower MOSFET18 A, 60 V, Logic Level N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits.www.onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID MAX AEC Q101 Qualified - NTDV18N06L18 A These Devices are Pb-Free and are RoHS Compliant60 V 54 mW@5.0 V(Note 1)T

 0.3. Size:121K  onsemi
ntd18n06l.pdf

NTD18N06
NTD18N06

NTD18N06LPower MOSFET18 A, 60 V, Logic Level N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits.http://onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID MAX These are Pb-Free Devices18 A60 V 54 mW@5.0 VTypical Applications (Note 1) Power SuppliesN-Channel Converters

 0.4. Size:271K  inchange semiconductor
ntd18n06l.pdf

NTD18N06
NTD18N06

isc N-Channel MOSFET Transistor NTD18N06LFEATURESDrain Current : I = 18A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 65m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

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