NTD18N06
MOSFET. Datasheet pdf. Equivalent
Type Designator: NTD18N06
Marking Code: 18N06
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 55
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 18
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 15.3
nC
trⓘ - Rise Time: 23
nS
Cossⓘ -
Output Capacitance: 162
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06
Ohm
Package:
DPAK
NTD18N06
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTD18N06
Datasheet (PDF)
..1. Size:162K onsemi
ntd18n06 ntd18n06t4g ntd18n06 ntd18n06g.pdf
NTD18N06Power MOSFET18 Amps, 60 VoltsN-Channel DPAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.V(BR)DSS RDS(on) TYP ID MAXFeatures60 V 51 mW 18 A Pb-Free Packages are AvailableN-ChannelTypical ApplicationsD Power Supplies Converters Power Motor
0.1. Size:156K onsemi
ntd18n06lg ntdv18n06lt4g.pdf
NTD18N06L, NTDV18N06LPower MOSFET18 A, 60 V, Logic Level N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits.http://onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID MAX AEC Q101 Qualified - NTDV18N06L18 A These Devices are Pb-Free and are RoHS Compliant60 V 54 mW@5.0 V(Note 1)
0.2. Size:86K onsemi
ntd18n06l ntdv18n06l.pdf
NTD18N06L, NTDV18N06LPower MOSFET18 A, 60 V, Logic Level N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits.www.onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID MAX AEC Q101 Qualified - NTDV18N06L18 A These Devices are Pb-Free and are RoHS Compliant60 V 54 mW@5.0 V(Note 1)T
0.3. Size:121K onsemi
ntd18n06l.pdf
NTD18N06LPower MOSFET18 A, 60 V, Logic Level N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits.http://onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID MAX These are Pb-Free Devices18 A60 V 54 mW@5.0 VTypical Applications (Note 1) Power SuppliesN-Channel Converters
0.4. Size:271K inchange semiconductor
ntd18n06l.pdf
isc N-Channel MOSFET Transistor NTD18N06LFEATURESDrain Current : I = 18A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 65m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
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