NTD20N03L27G Todos los transistores

 

NTD20N03L27G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTD20N03L27G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 74 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 137 nS

Cossⓘ - Capacitancia de salida: 271 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.027 Ohm

Encapsulados: DPAK

 Búsqueda de reemplazo de NTD20N03L27G MOSFET

- Selecciónⓘ de transistores por parámetros

 

NTD20N03L27G datasheet

 ..1. Size:127K  onsemi
ntd20n03l27g.pdf pdf_icon

NTD20N03L27G

NTD20N03L27, NVD20N03L27 Power MOSFET 20 Amps, 30 Volts, N-Channel DPAK This logic level vertical power MOSFET is a general purpose part that provides the best of design available today in a low cost power package. Avalanche energy issues make this part an ideal design in. http //onsemi.com The drain-to-source diode has a ideal fast but soft recovery. 20 A, 30 V, RDS(on) = 27 mW

 3.1. Size:95K  onsemi
ntd20n03l27 nvd20n03l27.pdf pdf_icon

NTD20N03L27G

NTD20N03L27, NVD20N03L27 Power MOSFET 20 A, 30 V, N-Channel DPAK This logic level vertical power MOSFET is a general purpose part that provides the best of design available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain-to-source diode has a ideal fast but soft recovery. http //onsemi.com Features Ultra-Low RDS(on), Sin

 3.2. Size:104K  onsemi
ntd20n03l27.pdf pdf_icon

NTD20N03L27G

NTD20N03L27 Power MOSFET 20 Amps, 30 Volts, N-Channel DPAK This logic level vertical power MOSFET is a general purpose part that provides the best of design available today in a low cost power package. Avalanche energy issues make this part an ideal design in. http //onsemi.com The drain-to-source diode has a ideal fast but soft recovery. Features 20 A, 30 V, RDS(on) = 27 mW

 3.3. Size:1437K  cn vbsemi
ntd20n03l27.pdf pdf_icon

NTD20N03L27G

NTD20N03L27 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007 at VGS = 10 V 50 30 25 nC 0.009 at VGS = 4.5 V 40 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S S Top View N-Channel MOSFET AB

Otros transistores... NTD14N03R-1G , NTD14N03RG , NTD15N06-001 , NTD15N06L-001 , NTD18N06 , NTD18N06G , NTD18N06LG , NTD18N06T4G , 50N06 , NTD20N06-001 , NTD20N06-1G , NTD20N06G , NTD20N06LG , NTD20P06L-001 , NTD20P06L-1G , NTD20P06LG , NTD20P06LT4G .

 

 

 


🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AUN084N10 | AUN065N10 | AUN063N10 | AUN062N08BG | AUN060N08AG | AUN053N10 | AUN050N08BGL | AUN045N085 | AUN042N055 | AUN036N10 | AUD069N10A | AUD062N08BG | AUD060N08AG | AUD060N055 | AUD056N08BGL | AUB062N08BG

 

 

 

Popular searches

irfb4110 | tip36c | bd139 transistor | irf840 datasheet | ge10001 | irf830 | irfp450 | mj21193

 

 

↑ Back to Top
.