Справочник MOSFET. NTD20N03L27G

 

NTD20N03L27G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NTD20N03L27G
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 74 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 137 ns
   Cossⓘ - Выходная емкость: 271 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.027 Ohm
   Тип корпуса: DPAK

 Аналог (замена) для NTD20N03L27G

 

 

NTD20N03L27G Datasheet (PDF)

 ..1. Size:127K  onsemi
 ntd20n03l27g.pdf

NTD20N03L27G NTD20N03L27G

NTD20N03L27,NVD20N03L27Power MOSFET20 Amps, 30 Volts, N-Channel DPAKThis logic level vertical power MOSFET is a general purpose partthat provides the best of design available today in a low cost powerpackage. Avalanche energy issues make this part an ideal design in. http://onsemi.comThe drain-to-source diode has a ideal fast but soft recovery.20 A, 30 V, RDS(on) = 27 mW

 3.1. Size:95K  onsemi
 ntd20n03l27 nvd20n03l27.pdf

NTD20N03L27G NTD20N03L27G

NTD20N03L27, NVD20N03L27Power MOSFET20 A, 30 V, N-Channel DPAKThis logic level vertical power MOSFET is a general purpose partthat provides the best of design available today in a low cost powerpackage. Avalanche energy issues make this part an ideal design in.The drain-to-source diode has a ideal fast but soft recovery.http://onsemi.comFeatures Ultra-Low RDS(on), Sin

 3.2. Size:104K  onsemi
 ntd20n03l27.pdf

NTD20N03L27G NTD20N03L27G

NTD20N03L27Power MOSFET20 Amps, 30 Volts, N-Channel DPAKThis logic level vertical power MOSFET is a general purpose partthat provides the best of design available today in a low cost powerpackage. Avalanche energy issues make this part an ideal design in.http://onsemi.comThe drain-to-source diode has a ideal fast but soft recovery.Features20 A, 30 V, RDS(on) = 27 mW

 3.3. Size:1437K  cn vbsemi
 ntd20n03l27.pdf

NTD20N03L27G NTD20N03L27G

NTD20N03L27www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETAB

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