Справочник MOSFET. NTD20N03L27G

 

NTD20N03L27G Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NTD20N03L27G
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 74 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 137 ns
   Cossⓘ - Выходная емкость: 271 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.027 Ohm
   Тип корпуса: DPAK
 

 Аналог (замена) для NTD20N03L27G

   - подбор ⓘ MOSFET транзистора по параметрам

 

NTD20N03L27G Datasheet (PDF)

 ..1. Size:127K  onsemi
ntd20n03l27g.pdfpdf_icon

NTD20N03L27G

NTD20N03L27,NVD20N03L27Power MOSFET20 Amps, 30 Volts, N-Channel DPAKThis logic level vertical power MOSFET is a general purpose partthat provides the best of design available today in a low cost powerpackage. Avalanche energy issues make this part an ideal design in. http://onsemi.comThe drain-to-source diode has a ideal fast but soft recovery.20 A, 30 V, RDS(on) = 27 mW

 3.1. Size:95K  onsemi
ntd20n03l27 nvd20n03l27.pdfpdf_icon

NTD20N03L27G

NTD20N03L27, NVD20N03L27Power MOSFET20 A, 30 V, N-Channel DPAKThis logic level vertical power MOSFET is a general purpose partthat provides the best of design available today in a low cost powerpackage. Avalanche energy issues make this part an ideal design in.The drain-to-source diode has a ideal fast but soft recovery.http://onsemi.comFeatures Ultra-Low RDS(on), Sin

 3.2. Size:104K  onsemi
ntd20n03l27.pdfpdf_icon

NTD20N03L27G

NTD20N03L27Power MOSFET20 Amps, 30 Volts, N-Channel DPAKThis logic level vertical power MOSFET is a general purpose partthat provides the best of design available today in a low cost powerpackage. Avalanche energy issues make this part an ideal design in.http://onsemi.comThe drain-to-source diode has a ideal fast but soft recovery.Features20 A, 30 V, RDS(on) = 27 mW

 3.3. Size:1437K  cn vbsemi
ntd20n03l27.pdfpdf_icon

NTD20N03L27G

NTD20N03L27www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETAB

Другие MOSFET... NTD14N03R-1G , NTD14N03RG , NTD15N06-001 , NTD15N06L-001 , NTD18N06 , NTD18N06G , NTD18N06LG , NTD18N06T4G , 50N06 , NTD20N06-001 , NTD20N06-1G , NTD20N06G , NTD20N06LG , NTD20P06L-001 , NTD20P06L-1G , NTD20P06LG , NTD20P06LT4G .

History: 2SK2671 | SHDC224701 | FCU600N65S3R0 | RU40191S | 2SK1581 | 3N189 | IRF9Z24PBF

 

 
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