NTD25P03L1 Todos los transistores

 

NTD25P03L1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTD25P03L1
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 37 nS
   Cossⓘ - Capacitancia de salida: 290 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.072 Ohm
   Paquete / Cubierta: DPAK

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NTD25P03L1 Datasheet (PDF)

 ..1. Size:160K  onsemi
ntd25p03l ntd25p03l1 ntd25p03lrlg.pdf

NTD25P03L1
NTD25P03L1

NTD25P03LPower MOSFET-25 Amp, -30 VoltLogic Level P-Channel DPAKDesigned for low voltage, high speed switching applications and tohttp://onsemi.comwithstand high energy in the avalanche and commutation modes. Thesource-to-drain diode recovery time is comparable to a discrete fastV(BR)DSS RDS(on) Typ ID Maxrecovery diode.-30 V 51 mW @ 5.0 V -25 AFeatures Pb-Free Packag

 5.1. Size:112K  onsemi
ntd25p03l std25p03l.pdf

NTD25P03L1
NTD25P03L1

NTD25P03L, STD25P03LPower MOSFET-25 A, -30 V, Logic Level P-Channel DPAKDesigned for low voltage, high speed switching applications and towithstand high energy in the avalanche and commutation modes.The source-to-drain diode recovery time is comparable to a discrete http://onsemi.comfast recovery diode.V(BR)DSS RDS(on) Typ ID MaxFeatures-30 V 51 mW @ 5.0 V -25 A S Prefix

 5.2. Size:837K  cn vbsemi
ntd25p03lg.pdf

NTD25P03L1
NTD25P03L1

NTD25P03LGwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.033 at VGS = - 10 V - 26 100 % Rg TestedRoHS- 30 19 nCCOMPLIANT 100 % UIS Tested0.046 at VGS = - 4.5 V - 21APPLICATIONS Load Switch Notebook Adaptor SwitchSTO-252GG D SDTop ViewP-

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