NTD25P03L1
MOSFET. Datasheet pdf. Equivalent
Type Designator: NTD25P03L1
Marking Code: 25P03L
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 75
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 25
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 15
nC
trⓘ - Rise Time: 37
nS
Cossⓘ -
Output Capacitance: 290
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.072
Ohm
Package:
DPAK
NTD25P03L1
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTD25P03L1
Datasheet (PDF)
..1. Size:160K onsemi
ntd25p03l ntd25p03l1 ntd25p03lrlg.pdf
NTD25P03LPower MOSFET-25 Amp, -30 VoltLogic Level P-Channel DPAKDesigned for low voltage, high speed switching applications and tohttp://onsemi.comwithstand high energy in the avalanche and commutation modes. Thesource-to-drain diode recovery time is comparable to a discrete fastV(BR)DSS RDS(on) Typ ID Maxrecovery diode.-30 V 51 mW @ 5.0 V -25 AFeatures Pb-Free Packag
5.1. Size:112K onsemi
ntd25p03l std25p03l.pdf
NTD25P03L, STD25P03LPower MOSFET-25 A, -30 V, Logic Level P-Channel DPAKDesigned for low voltage, high speed switching applications and towithstand high energy in the avalanche and commutation modes.The source-to-drain diode recovery time is comparable to a discrete http://onsemi.comfast recovery diode.V(BR)DSS RDS(on) Typ ID MaxFeatures-30 V 51 mW @ 5.0 V -25 A S Prefix
5.2. Size:837K cn vbsemi
ntd25p03lg.pdf
NTD25P03LGwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.033 at VGS = - 10 V - 26 100 % Rg TestedRoHS- 30 19 nCCOMPLIANT 100 % UIS Tested0.046 at VGS = - 4.5 V - 21APPLICATIONS Load Switch Notebook Adaptor SwitchSTO-252GG D SDTop ViewP-
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