NTD3055L104T4G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTD3055L104T4G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 48 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 15 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 104 nS
Cossⓘ - Capacitancia de salida: 105 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.104 Ohm
Encapsulados: DPAK
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NTD3055L104T4G datasheet
ntd3055l104t4g ntdv3055l104.pdf
NTD3055L104, NTDV3055L104 Power MOSFET 12 Amps, 60 Volts, Logic Level N-Channel DPAK Designed for low voltage, high speed switching applications in http //onsemi.com power supplies, converters and power motor controls and bridge circuits. Features V(BR)DSS RDS(on) TYP ID MAX Lower RDS(on) 60 V 104 mW 12 A Lower VDS(on) Tighter VSD Specification N-Channel Lower Di
ntd3055l104 ntdv3055l104.pdf
NTD3055L104, NTDV3055L104 Power MOSFET 12 A, 60 V, Logic Level N-Channel DPAK/IPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. www.onsemi.com Features Lower RDS(on) V(BR)DSS RDS(on) TYP ID MAX Lower VDS(on) 60 V 104 mW 12 A Tighter VSD Specification Lower Diode Reverse Recov
ntd3055l104.pdf
NTD3055L104 Power MOSFET 12 Amps, 60 Volts, Logic Level N-Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http //onsemi.com Features V(BR)DSS RDS(on) TYP ID MAX Lower RDS(on) Lower VDS(on) 60 V 104 mW 12 A Tighter VSD Specification Lower Diode Reverse Recovery Time N
ntd3055l104.pdf
NTD3055L104 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.032 at VGS = 10 V 35d TrenchFET Power MOSFET 60 21.7 0.037 at VGS = 4.5 V 30d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Supply D TO-251 - Secon
Otros transistores... NTD24N06LG , NTD25P03L1 , NTD25P03LRLG , NTD2955-1G , NTD2955G , NTD3055-094-1 , NTD3055-094-1G , NTD3055-150T4 , IRF630 , NTD3055L170T4G , NTD30N02G , NTD32N06 , NTD32N06-001 , NTD32N06L , NTD32N06LG , NTD3808N-1G , NTD3813N-1G .
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