NTD3055L104T4G
MOSFET. Datasheet pdf. Equivalent
Type Designator: NTD3055L104T4G
Marking Code: 55L104
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 48
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 12
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 7.4
nC
trⓘ - Rise Time: 104
nS
Cossⓘ -
Output Capacitance: 105
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.104
Ohm
Package:
DPAK
NTD3055L104T4G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTD3055L104T4G
Datasheet (PDF)
..1. Size:154K onsemi
ntd3055l104t4g ntdv3055l104.pdf
NTD3055L104,NTDV3055L104Power MOSFET12 Amps, 60 Volts, Logic LevelN-Channel DPAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.FeaturesV(BR)DSS RDS(on) TYP ID MAX Lower RDS(on)60 V 104 mW 12 A Lower VDS(on) Tighter VSD SpecificationN-Channel Lower Di
3.1. Size:91K onsemi
ntd3055l104 ntdv3055l104.pdf
NTD3055L104,NTDV3055L104Power MOSFET12 A, 60 V, Logic Level N-ChannelDPAK/IPAKDesigned for low voltage, high speed switching applications in powersupplies, converters and power motor controls and bridge circuits.www.onsemi.comFeatures Lower RDS(on)V(BR)DSS RDS(on) TYP ID MAX Lower VDS(on)60 V 104 mW 12 A Tighter VSD Specification Lower Diode Reverse Recov
3.2. Size:120K onsemi
ntd3055l104.pdf
NTD3055L104Power MOSFET12 Amps, 60 Volts, Logic LevelN-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits. http://onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID MAX Lower RDS(on) Lower VDS(on) 60 V 104 mW 12 A Tighter VSD Specification Lower Diode Reverse Recovery TimeN
3.3. Size:821K cn vbsemi
ntd3055l104.pdf
NTD3055L104www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.032 at VGS = 10 V35d TrenchFET Power MOSFET60 21.70.037 at VGS = 4.5 V30d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power SupplyDTO-251- Secon
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