All MOSFET. NTD3055L104T4G Datasheet

 

NTD3055L104T4G MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTD3055L104T4G
   Marking Code: 55L104
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 7.4 nC
   trⓘ - Rise Time: 104 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.104 Ohm
   Package: DPAK

 NTD3055L104T4G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTD3055L104T4G Datasheet (PDF)

 ..1. Size:154K  onsemi
 ntd3055l104t4g ntdv3055l104.pdf

NTD3055L104T4G NTD3055L104T4G

NTD3055L104,NTDV3055L104Power MOSFET12 Amps, 60 Volts, Logic LevelN-Channel DPAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.FeaturesV(BR)DSS RDS(on) TYP ID MAX Lower RDS(on)60 V 104 mW 12 A Lower VDS(on) Tighter VSD SpecificationN-Channel Lower Di

 3.1. Size:91K  onsemi
 ntd3055l104 ntdv3055l104.pdf

NTD3055L104T4G NTD3055L104T4G

NTD3055L104,NTDV3055L104Power MOSFET12 A, 60 V, Logic Level N-ChannelDPAK/IPAKDesigned for low voltage, high speed switching applications in powersupplies, converters and power motor controls and bridge circuits.www.onsemi.comFeatures Lower RDS(on)V(BR)DSS RDS(on) TYP ID MAX Lower VDS(on)60 V 104 mW 12 A Tighter VSD Specification Lower Diode Reverse Recov

 3.2. Size:120K  onsemi
 ntd3055l104.pdf

NTD3055L104T4G NTD3055L104T4G

NTD3055L104Power MOSFET12 Amps, 60 Volts, Logic LevelN-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits. http://onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID MAX Lower RDS(on) Lower VDS(on) 60 V 104 mW 12 A Tighter VSD Specification Lower Diode Reverse Recovery TimeN

 3.3. Size:821K  cn vbsemi
 ntd3055l104.pdf

NTD3055L104T4G NTD3055L104T4G

NTD3055L104www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.032 at VGS = 10 V35d TrenchFET Power MOSFET60 21.70.037 at VGS = 4.5 V30d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power SupplyDTO-251- Secon

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top