NTD3055L104T4G MOSFET Datasheet: N-Ch, 60V, 12A. Full specification with pinout and replacement list

NTD3055L104T4G Specs and Replacement

Type Designator: NTD3055L104T4G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 104 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.104 Ohm

Package: DPAK

NTD3055L104T4G substitution

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NTD3055L104T4G datasheet

..1. Size:154K onsemi
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NTD3055L104, NTDV3055L104 Power MOSFET 12 Amps, 60 Volts, Logic Level N-Channel DPAK Designed for low voltage, high speed switching applications in http //onsemi.com power supplies, converters and power motor controls and bridge circuits. Features V(BR)DSS RDS(on) TYP ID MAX Lower RDS(on) 60 V 104 mW 12 A Lower VDS(on) Tighter VSD Specification N-Channel Lower Di... See More ⇒

3.1. Size:91K onsemi
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NTD3055L104, NTDV3055L104 Power MOSFET 12 A, 60 V, Logic Level N-Channel DPAK/IPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. www.onsemi.com Features Lower RDS(on) V(BR)DSS RDS(on) TYP ID MAX Lower VDS(on) 60 V 104 mW 12 A Tighter VSD Specification Lower Diode Reverse Recov... See More ⇒

3.2. Size:120K onsemi
ntd3055l104.pdf pdf_icon

NTD3055L104 Power MOSFET 12 Amps, 60 Volts, Logic Level N-Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http //onsemi.com Features V(BR)DSS RDS(on) TYP ID MAX Lower RDS(on) Lower VDS(on) 60 V 104 mW 12 A Tighter VSD Specification Lower Diode Reverse Recovery Time N... See More ⇒

3.3. Size:821K cn vbsemi
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NTD3055L104 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.032 at VGS = 10 V 35d TrenchFET Power MOSFET 60 21.7 0.037 at VGS = 4.5 V 30d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Supply D TO-251 - Secon... See More ⇒

Detailed specifications: NTD24N06LG, NTD25P03L1, NTD25P03LRLG, NTD2955-1G, NTD2955G, NTD3055-094-1, NTD3055-094-1G, NTD3055-150T4, IRF630, NTD3055L170T4G, NTD30N02G, NTD32N06, NTD32N06-001, NTD32N06L, NTD32N06LG, NTD3808N-1G, NTD3813N-1G