NTD30N02G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTD30N02G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 75 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 24 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 30 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 28 nS
Cossⓘ - Capacitancia de salida: 425 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0145 Ohm
Encapsulados: DPAK
Búsqueda de reemplazo de NTD30N02G MOSFET
- Selecciónⓘ de transistores por parámetros
NTD30N02G datasheet
..1. Size:129K onsemi
ntd30n02-d ntd30n02g.pdf 
NTD30N02 Power MOSFET 30 Amps, 24 Volts N-Channel DPAK Designed for low voltage, high speed switching applications in http //onsemi.com power supplies, converters and power motor controls and bridge circuits. 30 AMPERES Features 24 VOLTS Pb-Free Packages are Available RDS(on) = 11.2 mW (Typ.) Typical Applications N-Channel Power Supplies D Converters Power Motor
9.1. Size:238K onsemi
ntd3055l170 nvd3055l170.pdf
NTD3055L170, NVD3055L170 MOSFET Power, N-Channel, Logic Level, DPAK/IPAK www.onsemi.com 9.0 A, 60 V Designed for low voltage, high speed switching applications in 9.0 AMPERES, 60 VOLTS power supplies, converters and power motor controls and bridge RDS(on) = 170 mW circuits. D Features NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Chang
9.2. Size:132K onsemi
ntd3055l170.pdf
NTD3055L170 Power MOSFET 9.0 Amps, 60 Volts, Logic Level, N-Channel DPAK Designed for low voltage, high speed switching applications in http //onsemi.com power supplies, converters and power motor controls and bridge circuits. 9.0 AMPERES, 60 VOLTS Features RDS(on) = 170 mW These are Pb-Free Devices N-Channel Typical Applications D Power Supplies Converters Powe
9.3. Size:154K onsemi
ntd3055l104t4g ntdv3055l104.pdf
NTD3055L104, NTDV3055L104 Power MOSFET 12 Amps, 60 Volts, Logic Level N-Channel DPAK Designed for low voltage, high speed switching applications in http //onsemi.com power supplies, converters and power motor controls and bridge circuits. Features V(BR)DSS RDS(on) TYP ID MAX Lower RDS(on) 60 V 104 mW 12 A Lower VDS(on) Tighter VSD Specification N-Channel Lower Di
9.4. Size:123K onsemi
ntd3055-150 nvd3055-150.pdf
NTD3055-150, NVD3055-150 Power MOSFET 9.0 A, 60 V, N-Channel DPAK/IPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge www.onsemi.com circuits. 9.0 AMPERES, 60 VOLTS Features RDS(on) = 122 mW (Typ) NVD Prefix for Automotive and Other Applications Requiring D Unique Site and Control Change Requirements
9.5. Size:91K onsemi
ntd3055l104 ntdv3055l104.pdf
NTD3055L104, NTDV3055L104 Power MOSFET 12 A, 60 V, Logic Level N-Channel DPAK/IPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. www.onsemi.com Features Lower RDS(on) V(BR)DSS RDS(on) TYP ID MAX Lower VDS(on) 60 V 104 mW 12 A Tighter VSD Specification Lower Diode Reverse Recov
9.6. Size:134K onsemi
ntd3055-150.pdf
NTD3055-150 Power MOSFET 9.0 A, 60 V, N-Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http //onsemi.com Features 9.0 AMPERES, 60 VOLTS Pb-Free Packages are Available RDS(on) = 122 mW (Typ) Typical Applications N-Channel Power Supplies D Converters Power Motor Co
9.7. Size:146K onsemi
ntd3055-094 nvd3055-094.pdf
NTD3055-094, NVD3055-094 MOSFET Power, N-Channel, DPAK/IPAK 12 A, 60 V Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http //onsemi.com Features V(BR)DSS RDS(on) TYP ID MAX Lower RDS(on) Lower VDS(on) 60 V 94 mW 12 A Lower and Tighter VSD Lower Diode Reverse Recovery Time D
9.8. Size:120K onsemi
ntd3055l104.pdf
NTD3055L104 Power MOSFET 12 Amps, 60 Volts, Logic Level N-Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http //onsemi.com Features V(BR)DSS RDS(on) TYP ID MAX Lower RDS(on) Lower VDS(on) 60 V 104 mW 12 A Tighter VSD Specification Lower Diode Reverse Recovery Time N
9.9. Size:144K onsemi
ntd3055-094-1 ntd3055-094-1g.pdf
NTD3055-094 Power MOSFET 12 A, 60 V, N-Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http //onsemi.com Features V(BR)DSS RDS(on) TYP ID MAX Lower RDS(on) Lower VDS(on) 60 V 94 mW 12 A Lower and Tighter VSD Lower Diode Reverse Recovery Time N-Channel Lower Reve
9.10. Size:123K onsemi
ntd3055l170t4g.pdf
NTD3055L170, NVD3055L170 Power MOSFET 9.0 A, 60 V, Logic Level, N-Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge http //onsemi.com circuits. 9.0 AMPERES, 60 VOLTS Features NVD Prefix for Automotive and Other Applications Requiring RDS(on) = 170 mW Unique Site and Control Change Requirement
9.11. Size:130K onsemi
ntd3055-150t4.pdf
NTD3055-150 Power MOSFET 9.0 A, 60 V, N-Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http //onsemi.com Features 9.0 AMPERES, 60 VOLTS Pb-Free Packages are Available RDS(on) = 122 mW (Typ) Typical Applications N-Channel Power Supplies D Converters Power Motor Co
9.12. Size:147K onsemi
ntd3055-094.pdf
NTD3055-094 Power MOSFET 12 A, 60 V, N-Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http //onsemi.com Features V(BR)DSS RDS(on) TYP ID MAX Lower RDS(on) Lower VDS(on) 60 V 94 mW 12 A Lower and Tighter VSD Lower Diode Reverse Recovery Time N-Channel Lower Reve
9.13. Size:821K cn vbsemi
ntd3055l104.pdf
NTD3055L104 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.032 at VGS = 10 V 35d TrenchFET Power MOSFET 60 21.7 0.037 at VGS = 4.5 V 30d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Supply D TO-251 - Secon
9.14. Size:852K cn vbsemi
ntd3055l170t4g.pdf
NTD3055L170T4G www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.073 at VGS = 10 V 18.2 Material categorization 60 19.8 For definitions of compliance please see 0.085 at VGS = 4.5 V 13.2 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters
Otros transistores... NTD25P03LRLG
, NTD2955-1G
, NTD2955G
, NTD3055-094-1
, NTD3055-094-1G
, NTD3055-150T4
, NTD3055L104T4G
, NTD3055L170T4G
, AON7408
, NTD32N06
, NTD32N06-001
, NTD32N06L
, NTD32N06LG
, NTD3808N-1G
, NTD3813N-1G
, NTD3817N-1G
, NTD40N03R-1G
.
