NTD30N02G
MOSFET. Datasheet pdf. Equivalent
Type Designator: NTD30N02G
Marking Code: D30N02
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 75
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 24
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 30
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 14.4
nC
trⓘ - Rise Time: 28
nS
Cossⓘ -
Output Capacitance: 425
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0145
Ohm
Package:
DPAK
NTD30N02G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTD30N02G
Datasheet (PDF)
..1. Size:129K onsemi
ntd30n02-d ntd30n02g.pdf
NTD30N02Power MOSFET30 Amps, 24 VoltsN-Channel DPAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.30 AMPERESFeatures 24 VOLTS Pb-Free Packages are Available RDS(on) = 11.2 mW (Typ.)Typical ApplicationsN-Channel Power SuppliesD Converters Power Motor
9.1. Size:238K onsemi
ntd3055l170 nvd3055l170.pdf
NTD3055L170,NVD3055L170MOSFET Power,N-Channel, Logic Level,DPAK/IPAKwww.onsemi.com9.0 A, 60 VDesigned for low voltage, high speed switching applications in9.0 AMPERES, 60 VOLTSpower supplies, converters and power motor controls and bridgeRDS(on) = 170 mWcircuits.DFeatures NVD Prefix for Automotive and Other Applications RequiringUnique Site and Control Chang
9.2. Size:132K onsemi
ntd3055l170.pdf
NTD3055L170Power MOSFET9.0 Amps, 60 Volts, Logic Level,N-Channel DPAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.9.0 AMPERES, 60 VOLTSFeaturesRDS(on) = 170 mW These are Pb-Free DevicesN-ChannelTypical ApplicationsD Power Supplies Converters Powe
9.3. Size:154K onsemi
ntd3055l104t4g ntdv3055l104.pdf
NTD3055L104,NTDV3055L104Power MOSFET12 Amps, 60 Volts, Logic LevelN-Channel DPAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.FeaturesV(BR)DSS RDS(on) TYP ID MAX Lower RDS(on)60 V 104 mW 12 A Lower VDS(on) Tighter VSD SpecificationN-Channel Lower Di
9.4. Size:123K onsemi
ntd3055-150 nvd3055-150.pdf
NTD3055-150,NVD3055-150Power MOSFET9.0 A, 60 V, N-Channel DPAK/IPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgewww.onsemi.comcircuits.9.0 AMPERES, 60 VOLTSFeaturesRDS(on) = 122 mW (Typ) NVD Prefix for Automotive and Other Applications RequiringDUnique Site and Control Change Requirements
9.5. Size:91K onsemi
ntd3055l104 ntdv3055l104.pdf
NTD3055L104,NTDV3055L104Power MOSFET12 A, 60 V, Logic Level N-ChannelDPAK/IPAKDesigned for low voltage, high speed switching applications in powersupplies, converters and power motor controls and bridge circuits.www.onsemi.comFeatures Lower RDS(on)V(BR)DSS RDS(on) TYP ID MAX Lower VDS(on)60 V 104 mW 12 A Tighter VSD Specification Lower Diode Reverse Recov
9.6. Size:134K onsemi
ntd3055-150.pdf
NTD3055-150Power MOSFET9.0 A, 60 V, N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits.http://onsemi.comFeatures9.0 AMPERES, 60 VOLTS Pb-Free Packages are AvailableRDS(on) = 122 mW (Typ)Typical ApplicationsN-Channel Power SuppliesD Converters Power Motor Co
9.7. Size:146K onsemi
ntd3055-094 nvd3055-094.pdf
NTD3055-094, NVD3055-094MOSFET Power,N-Channel, DPAK/IPAK12 A, 60 VDesigned for low voltage, high speed switching applications in powersupplies, converters and power motor controls and bridge circuits.http://onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID MAX Lower RDS(on) Lower VDS(on)60 V 94 mW 12 A Lower and Tighter VSD Lower Diode Reverse Recovery Time D
9.8. Size:120K onsemi
ntd3055l104.pdf
NTD3055L104Power MOSFET12 Amps, 60 Volts, Logic LevelN-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits. http://onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID MAX Lower RDS(on) Lower VDS(on) 60 V 104 mW 12 A Tighter VSD Specification Lower Diode Reverse Recovery TimeN
9.9. Size:144K onsemi
ntd3055-094-1 ntd3055-094-1g.pdf
NTD3055-094Power MOSFET12 A, 60 V, N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits.http://onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID MAX Lower RDS(on) Lower VDS(on) 60 V 94 mW 12 A Lower and Tighter VSD Lower Diode Reverse Recovery TimeN-Channel Lower Reve
9.10. Size:123K onsemi
ntd3055l170t4g.pdf
NTD3055L170,NVD3055L170Power MOSFET9.0 A, 60 V, Logic Level, N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgehttp://onsemi.comcircuits.9.0 AMPERES, 60 VOLTSFeatures NVD Prefix for Automotive and Other Applications Requiring RDS(on) = 170 mWUnique Site and Control Change Requirement
9.11. Size:130K onsemi
ntd3055-150t4.pdf
NTD3055-150Power MOSFET9.0 A, 60 V, N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits.http://onsemi.comFeatures9.0 AMPERES, 60 VOLTS Pb-Free Packages are AvailableRDS(on) = 122 mW (Typ)Typical ApplicationsN-Channel Power SuppliesD Converters Power Motor Co
9.12. Size:147K onsemi
ntd3055-094.pdf
NTD3055-094Power MOSFET12 A, 60 V, N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits.http://onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID MAX Lower RDS(on) Lower VDS(on) 60 V 94 mW 12 A Lower and Tighter VSD Lower Diode Reverse Recovery TimeN-Channel Lower Reve
9.13. Size:821K cn vbsemi
ntd3055l104.pdf
NTD3055L104www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.032 at VGS = 10 V35d TrenchFET Power MOSFET60 21.70.037 at VGS = 4.5 V30d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power SupplyDTO-251- Secon
9.14. Size:852K cn vbsemi
ntd3055l170t4g.pdf
NTD3055L170T4Gwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.073 at VGS = 10 V 18.2 Material categorization:60 19.8For definitions of compliance please see0.085 at VGS = 4.5 V 13.2TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters
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