NTD3808N-1G Todos los transistores

 ..1. Size:93K  onsemi
 ntd3808n-1g.pdf

NTD3808N Power MOSFET 16 V, 76 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices 5.8 mW @ 10 V 16 V 76 A Applications 8.5 mW @ 4.5 V DC-DC Con

 9.1. Size:94K  onsemi
 ntd3813n-1g.pdf

NTD3813N Power MOSFET 16 V, 51 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices 8.75 mW @ 10 V 16 V 51 A Applications

 9.2. Size:94K  onsemi
 ntd3817n-1g.pdf

NTD3817N Power MOSFET 16 V, 34.5 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices 13.9 mW @ 10 V 16 V 34.5 A Applicat