NTD3813N-1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTD3813N-1G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 34.9 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 16 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 51 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 38 nS
Cossⓘ - Capacitancia de salida: 338 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00875 Ohm
Paquete / Cubierta: DPAK IPAK
- Selección de transistores por parámetros
NTD3813N-1G Datasheet (PDF)
ntd3813n-1g.pdf

NTD3813NPower MOSFET16 V, 51 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices8.75 mW @ 10 V16 V51 AApplications
ntd3817n-1g.pdf

NTD3817NPower MOSFET16 V, 34.5 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices13.9 mW @ 10 V16 V34.5 AApplicat
ntd3808n-1g.pdf

NTD3808NPower MOSFET16 V, 76 A, Single N-Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices5.8 mW @ 10 V16 V76 AApplications8.5 mW @ 4.5 V DC-DC Con
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: AON7421 | UT9435HL-AA3-R | IXFK48N50Q | FQD5N15TF | 2N7064 | SVF4N60CAF | NX7002BKXB
History: AON7421 | UT9435HL-AA3-R | IXFK48N50Q | FQD5N15TF | 2N7064 | SVF4N60CAF | NX7002BKXB



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: DHF10H035R | DHF100N03B13 | DHF035N04 | DHEZ24B31 | DHESJ17N65 | DHESJ13N65 | DHESJ11N65 | DHE9Z24 | DHE90N055R | DHE90N045R | DHE85N08 | DHE8290 | DHE80N08B22 | DHE8004 | DHE50N15 | DHE50N06FZC
Popular searches
irf9630 | mj2955 | mje15030 | 2n3904 transistor | 2sd424 | 2sc828 | 2n4125 | tip42c transistor