NTD3813N-1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTD3813N-1G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 34.9 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 16 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 51 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 38 nS
Cossⓘ - Capacitancia de salida: 338 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00875 Ohm
Paquete / Cubierta: DPAK IPAK
Búsqueda de reemplazo de NTD3813N-1G MOSFET
NTD3813N-1G Datasheet (PDF)
ntd3813n-1g.pdf
NTD3813NPower MOSFET16 V, 51 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices8.75 mW @ 10 V16 V51 AApplications
ntd3817n-1g.pdf
NTD3817NPower MOSFET16 V, 34.5 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices13.9 mW @ 10 V16 V34.5 AApplicat
ntd3808n-1g.pdf
NTD3808NPower MOSFET16 V, 76 A, Single N-Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices5.8 mW @ 10 V16 V76 AApplications8.5 mW @ 4.5 V DC-DC Con
Otros transistores... NTD3055L104T4G , NTD3055L170T4G , NTD30N02G , NTD32N06 , NTD32N06-001 , NTD32N06L , NTD32N06LG , NTD3808N-1G , IRLB4132 , NTD3817N-1G , NTD40N03R-1G , NTD40N03RG , NTD4302-1G , NTD4804N-1G , NTD4804NA-1G , NTD4805N-1G , NTD4805NT4G .
History: NTMFD4C85N | SSF65R260S2R | NTD3808N-1G | NTMFD4C86N
History: NTMFD4C85N | SSF65R260S2R | NTD3808N-1G | NTMFD4C86N
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AGM610MN | AGM610M | AGM60P90D | AGM60P90A | AGM60P85E | AGM60P85D | AGM60P85AP | AGM60P40D | AGM60P40A | AGM60P35F | AGM60P30D | AGM60P30C | AGM60P30AP | AGM60P30A | AGM406MNQ | AGM406MNA
Popular searches
irf9630 | mj2955 | mje15030 | 2n3904 transistor | 2sd424 | 2sc828 | 2n4125 | tip42c transistor

