NTD3813N-1G MOSFET. Datasheet pdf. Equivalent
Type Designator: NTD3813N-1G
Marking Code: 3813N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 34.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 16 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 51 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 8.5 nC
trⓘ - Rise Time: 38 nS
Cossⓘ - Output Capacitance: 338 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00875 Ohm
Package: DPAK IPAK
NTD3813N-1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTD3813N-1G Datasheet (PDF)
ntd3813n-1g.pdf
NTD3813NPower MOSFET16 V, 51 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices8.75 mW @ 10 V16 V51 AApplications
ntd3817n-1g.pdf
NTD3817NPower MOSFET16 V, 34.5 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices13.9 mW @ 10 V16 V34.5 AApplicat
ntd3808n-1g.pdf
NTD3808NPower MOSFET16 V, 76 A, Single N-Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices5.8 mW @ 10 V16 V76 AApplications8.5 mW @ 4.5 V DC-DC Con
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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History: 2SK2436
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