NTD4804NA-1G Todos los transistores

 

NTD4804NA-1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTD4804NA-1G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 93.75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 117 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 256 nS
   Cossⓘ - Capacitancia de salida: 952 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: DPAK IPAK
 

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NTD4804NA-1G Datasheet (PDF)

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NTD4804NA-1G

NTD4804NAAdvance InformationPower MOSFET25 V, 117 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(on) MAX ID MAX These are Pb-Free Devices4.0 mW @ 10 V25 V 117 AApplications5.5 mW @ 4.5 V CPU Power

 6.1. Size:157K  onsemi
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NTD4804NA-1G

NTD4804N, NVD4804NPower MOSFET30 V, 117 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4804NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant4.0 mW @ 10 V30 V 117

 6.2. Size:89K  onsemi
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NTD4804NA-1G

NTD4804N, NVD4804NPower MOSFET30 V, 117 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseswww.onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4804NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant4.0 mW @ 10 V30 V 117 A

 6.3. Size:275K  onsemi
ntd4804n-d.pdf pdf_icon

NTD4804NA-1G

NTD4804NPower MOSFET30 V, 117 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications4.0 m @10V CPU Power Delivery30 V 117 A5.5 m @4.5V DC--DC

Otros transistores... NTD32N06LG , NTD3808N-1G , NTD3813N-1G , NTD3817N-1G , NTD40N03R-1G , NTD40N03RG , NTD4302-1G , NTD4804N-1G , IRF9540N , NTD4805N-1G , NTD4805NT4G , NTD4806N-1G , NTD4809N-1G , NTD4809NA-1G , NTD4809NH-1G , NTD4810N-1G , NTD4810NH-1G .

 

 
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