All MOSFET. NTD4804NA-1G Datasheet

 

NTD4804NA-1G MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTD4804NA-1G
   Marking Code: 4804N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 93.75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 117 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 30 nC
   trⓘ - Rise Time: 256 nS
   Cossⓘ - Output Capacitance: 952 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: DPAK IPAK

 NTD4804NA-1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTD4804NA-1G Datasheet (PDF)

 ..1. Size:153K  onsemi
ntd4804na-1g.pdf

NTD4804NA-1G
NTD4804NA-1G

NTD4804NAAdvance InformationPower MOSFET25 V, 117 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(on) MAX ID MAX These are Pb-Free Devices4.0 mW @ 10 V25 V 117 AApplications5.5 mW @ 4.5 V CPU Power

 6.1. Size:157K  onsemi
ntd4804n-1g.pdf

NTD4804NA-1G
NTD4804NA-1G

NTD4804N, NVD4804NPower MOSFET30 V, 117 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4804NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant4.0 mW @ 10 V30 V 117

 6.2. Size:89K  onsemi
ntd4804n nvd4804n.pdf

NTD4804NA-1G
NTD4804NA-1G

NTD4804N, NVD4804NPower MOSFET30 V, 117 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseswww.onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4804NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant4.0 mW @ 10 V30 V 117 A

 6.3. Size:275K  onsemi
ntd4804n-d.pdf

NTD4804NA-1G
NTD4804NA-1G

NTD4804NPower MOSFET30 V, 117 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications4.0 m @10V CPU Power Delivery30 V 117 A5.5 m @4.5V DC--DC

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