NTD4805N-1G Todos los transistores

 

NTD4805N-1G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTD4805N-1G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 79 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 95 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20.3 nS

Cossⓘ - Capacitancia de salida: 610 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm

Encapsulados: DPAK IPAK

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NTD4805N-1G datasheet

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NTD4805N-1G

NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4805N V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 5.0 mW @

 5.1. Size:294K  onsemi
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NTD4805N-1G

NTD4805N Power MOSFET 30 V, 88 A, Single N--Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 5.0 m @10V CPU Power Delivery 30 V 88 A 7.4 m @4.5V DC--DC Co

 6.1. Size:116K  onsemi
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NTD4805N-1G

NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(on) MAX ID MAX Unique Site and Control Change Requirements; AEC-Q

 8.1. Size:150K  onsemi
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NTD4805N-1G

NTD4809N Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 9.0 mW @ 10 V CPU Power Delivery 30 V 58 A 14 mW @ 4.5 V DC-DC Conv

Otros transistores... NTD3808N-1G , NTD3813N-1G , NTD3817N-1G , NTD40N03R-1G , NTD40N03RG , NTD4302-1G , NTD4804N-1G , NTD4804NA-1G , K4145 , NTD4805NT4G , NTD4806N-1G , NTD4809N-1G , NTD4809NA-1G , NTD4809NH-1G , NTD4810N-1G , NTD4810NH-1G , NTD4813N-1G .

 

 

 

 

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