NTD4805N-1G
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NTD4805N-1G
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 79
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 95
A
Tjⓘ - Максимальная температура канала: 175
°C
trⓘ -
Время нарастания: 20.3
ns
Cossⓘ - Выходная емкость: 610
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.005
Ohm
Тип корпуса:
DPAK
IPAK
- подбор MOSFET транзистора по параметрам
NTD4805N-1G
Datasheet (PDF)
..1. Size:153K onsemi
ntd4805n-1g ntd4805nt4g.pdf 

NTD4805N, NVD4805NPower MOSFET30 V, 88 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4805NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant5.0 mW @
5.1. Size:294K onsemi
ntd4805n-d.pdf 

NTD4805NPower MOSFET30 V, 88 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications5.0 m @10V CPU Power Delivery30 V 88 A7.4 m @4.5V DC--DC Co
6.1. Size:116K onsemi
ntd4805n nvd4805n.pdf 

NTD4805N, NVD4805NPower MOSFET30 V, 88 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications RequiringV(BR)DSS RDS(on) MAX ID MAXUnique Site and Control Change Requirements; AEC-Q
8.1. Size:150K onsemi
ntd4809n-1g.pdf 

NTD4809NPower MOSFET30 V, 58 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications9.0 mW @ 10 V CPU Power Delivery30 V 58 A14 mW @ 4.5 V DC-DC Conv
8.2. Size:124K onsemi
ntd4806n.pdf 

NTD4806NPower MOSFET30 V, 76 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications6.0 mW @ 10 V CPU Power Delivery30 V 76 A9.4 mW @ 4.5 V DC-DC Con
8.3. Size:117K onsemi
ntd4809n nvd4809n.pdf 

NTD4809N, NVD4809NPower MOSFET30 V, 58 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4809NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant9.0 mW @ 10 V30 V 58 A
8.4. Size:330K onsemi
ntd4809nhg.pdf 

NTD4809NHPower MOSFET30 V, 58 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications9.0 m @10V30 V 58 A CPU Power Delivery12.5 m @4.5 V DC--DC
8.5. Size:320K onsemi
ntd4808n-d.pdf 

NTD4808NPower MOSFET30 V, 63 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications8.0 m @10V CPU Power Delivery30 V63 A12.4 m @4.5 V DC--DC
8.6. Size:153K onsemi
ntd4806n-1g.pdf 

NTD4806N, NVD4806NPower MOSFET30 V, 76 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4806NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant6.0 mW @
8.7. Size:110K onsemi
ntd4809na-1g.pdf 

NTD4809NAAdvance InformationPower MOSFET25 V, 58 A, Single N- Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(on) MAX ID MAX These are Pb-Free Devices9.0 mW @ 10 V25 V 58 AApplications14 mW @ 4.5 V CPU Power D
8.8. Size:270K onsemi
ntd4809n-d.pdf 

NTD4809NPower MOSFET30 V, 58 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications9.0 m @10V CPU Power Delivery30 V 58 A14 m @4.5 V DC--DC Co
8.9. Size:157K onsemi
ntd4804n-1g.pdf 

NTD4804N, NVD4804NPower MOSFET30 V, 117 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4804NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant4.0 mW @ 10 V30 V 117
8.10. Size:153K onsemi
ntd4804na-1g.pdf 

NTD4804NAAdvance InformationPower MOSFET25 V, 117 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(on) MAX ID MAX These are Pb-Free Devices4.0 mW @ 10 V25 V 117 AApplications5.5 mW @ 4.5 V CPU Power
8.11. Size:153K onsemi
ntd4809nh-1g.pdf 

NTD4809NH, NVD4809NHPower MOSFET30 V, 58 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4809NHV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant9.0 m
8.12. Size:89K onsemi
ntd4804n nvd4804n.pdf 

NTD4804N, NVD4804NPower MOSFET30 V, 117 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseswww.onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4804NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant4.0 mW @ 10 V30 V 117 A
8.13. Size:275K onsemi
ntd4804n-d.pdf 

NTD4804NPower MOSFET30 V, 117 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications4.0 m @10V CPU Power Delivery30 V 117 A5.5 m @4.5V DC--DC
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