NTD4810N-1G Todos los transistores

 ..1. Size:148K  onsemi
 ntd4810n-1g nvd4810n.pdf

NTD4810N, NVD4810N Power MOSFET 30 V, 54 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4810N V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 10 mW @

 5.1. Size:294K  onsemi
 ntd4810n-d.pdf

NTD4810N Power MOSFET 30 V, 54 A, Single N--Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 10 m @10V 30 V 54 A CPU Power Delivery 15.7 m @4.5 V DC--DC C

 6.1. Size:284K  onsemi
 ntd4810nh-1g.pdf

NTD4810NH Power MOSFET 30 V, 54 A, Single N--Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(on) MAX ID MAX Low RG 10 m @10V 30 V 54 A These are Pb--Free Devices 16.7 m @4.5 V Applications D CPU Power Delive

 8.1. Size:290K  onsemi
 ntd4815nh-1g ntd4815nh-d.pdf

NTD4815NH Power MOSFET 30 V, 35 A, Single N--Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Low RG V(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices 15 m @10V 30 V 35 A Applications 27.7 m @4.5 V CPU Power Delivery

 8.2. Size:153K  onsemi
 ntd4815n-1g ntd4815nt4g.pdf

NTD4815N, NVD4815N Power MOSFET 30 V, 35 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4815N V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 15 mW @

 8.3. Size:897K  onsemi
 ntd4813nh nvd4813nh.pdf

 8.4. Size:302K  onsemi
 ntd4813n-1g ntd4813n-d.pdf

NTD4813N Power MOSFET 30 V, 40 A, Single N--Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 13 m @10V CPU Power Delivery 30 V 40 A 24 m @4.5 V DC--DC Co

 8.5. Size:140K  onsemi
 ntd4813nh-1g.pdf

NTD4813NH, NVD4813NH Power MOSFET 30 V, 40 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Low RG V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable - NVD4813NH These Devices are Pb-Free and are RoHS Comp

 8.6. Size:125K  onsemi
 ntd4815n.pdf

NTD4815N Power MOSFET 30 V, 35 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 15 mW @ 10 V 30 V 35 A CPU Power Delivery 25 mW @ 4.5 V DC-DC Conve

 8.7. Size:294K  onsemi
 ntd4813nh-d.pdf

NTD4813NH Power MOSFET 30 V, 40 A, Single N--Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Low RG V(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices 13 m @10V Applications 30 V 40 A 25.9 m @4.5 V CPU Power Delivery