NTD4810N-1G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NTD4810N-1G
Маркировка: 4810N
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 50 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 54 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 9.2 nC
Время нарастания (tr): 20.7 ns
Выходная емкость (Cd): 284 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.01 Ohm
Тип корпуса: DPAK IPAK
Аналог (замена) для NTD4810N-1G
NTD4810N-1G Datasheet (PDF)
ntd4810n-1g nvd4810n.pdf
NTD4810N, NVD4810NPower MOSFET30 V, 54 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4810NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant10 mW @
ntd4810n-d.pdf
NTD4810NPower MOSFET30 V, 54 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications10 m @10V30 V 54 A CPU Power Delivery15.7 m @4.5 V DC--DC C
ntd4810nh-1g.pdf
NTD4810NHPower MOSFET30 V, 54 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(on) MAX ID MAX Low RG10 m @10V30 V 54 A These are Pb--Free Devices16.7 m @4.5 VApplicationsD CPU Power Delive
ntd4815nh-1g ntd4815nh-d.pdf
NTD4815NHPower MOSFET30 V, 35 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Low RGV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices15 m @10V30 V35 AApplications27.7 m @4.5 V CPU Power Delivery
ntd4815n-1g ntd4815nt4g.pdf
NTD4815N, NVD4815NPower MOSFET30 V, 35 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4815NV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant15 mW @
ntd4813n-1g ntd4813n-d.pdf
NTD4813NPower MOSFET30 V, 40 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications13 m @10V CPU Power Delivery30 V40 A24 m @4.5 V DC--DC Co
ntd4813nh-1g.pdf
NTD4813NH, NVD4813NHPower MOSFET30 V, 40 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Low RGV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable - NVD4813NH These Devices are Pb-Free and are RoHS Comp
ntd4815n.pdf
NTD4815NPower MOSFET30 V, 35 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications 15 mW @ 10 V30 V35 A CPU Power Delivery25 mW @ 4.5 V DC-DC Conve
ntd4813nh-d.pdf
NTD4813NHPower MOSFET30 V, 40 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Low RGV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices13 m @10VApplications30 V40 A25.9 m @4.5 V CPU Power Delivery
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