NTD4810N-1G Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NTD4810N-1G
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 50 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 54 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 20.7 ns
Cossⓘ - Выходная емкость: 284 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm
Тип корпуса: DPAK IPAK
Аналог (замена) для NTD4810N-1G
NTD4810N-1G Datasheet (PDF)
ntd4810n-1g nvd4810n.pdf

NTD4810N, NVD4810NPower MOSFET30 V, 54 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4810NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant10 mW @
ntd4810n-d.pdf

NTD4810NPower MOSFET30 V, 54 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications10 m @10V30 V 54 A CPU Power Delivery15.7 m @4.5 V DC--DC C
ntd4810nh-1g.pdf

NTD4810NHPower MOSFET30 V, 54 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(on) MAX ID MAX Low RG10 m @10V30 V 54 A These are Pb--Free Devices16.7 m @4.5 VApplicationsD CPU Power Delive
ntd4815nh-1g ntd4815nh-d.pdf

NTD4815NHPower MOSFET30 V, 35 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Low RGV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices15 m @10V30 V35 AApplications27.7 m @4.5 V CPU Power Delivery
Другие MOSFET... NTD4804N-1G , NTD4804NA-1G , NTD4805N-1G , NTD4805NT4G , NTD4806N-1G , NTD4809N-1G , NTD4809NA-1G , NTD4809NH-1G , AON7506 , NTD4810NH-1G , NTD4813N-1G , NTD4813NH-1G , NTD4815N-1G , NTD4815NH-1G , NTD4815NT4G , NTD4854N-1G , NTD4855N-1G .
History: BUZ73 | IPP50R380CE | NP40N055CHE | TPC8218-H | SQJ433EP | MS65R600R | SSW65R043SFD2
History: BUZ73 | IPP50R380CE | NP40N055CHE | TPC8218-H | SQJ433EP | MS65R600R | SSW65R043SFD2



Список транзисторов
Обновления
MOSFET: JMSL0406AKQ | JMSL0406AK | JMSL0406AGQ | JMSL0406AGDQ | JMSL0406AGD | JMSL04060GDQ | JMSL04055UQ | JMSL04055GQ | JMSL0403PU | JMSL0403PK | JMSL0403PGQ | JMSL0403PG | JMSL0403AU | JMSL0403AGQ | JMSL0403AG | JMTQ90N02A
Popular searches
bt137 datasheet | 2n2907a datasheet | irfz24n | bd135 | d880 | 2n5457 equivalent | 2sc945 replacement | 9014 transistor